VB2470

001 VB2470 www.VBsemi.com P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET - 40 RDS(on) () at VGS = - 10 V 0.071 RDS(on) () at VGS = - 4.5 V 0.100 ID (A) - 3.6 Configuration • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Single TO-236 (SOT-23) G S 1 G 3 S D 2 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V - 3.6 - 2.6 IS - 3.6 IDM - 18 IAS - 12 EAS 7.2 PD UNIT 3 1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 166 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountb °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. 服务热线：400-655-8788 1 VB2470 www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = - 250 μA - 40 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.0 - - 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = - 40 V - - -1 - - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 40 V, TJ = 125 °C VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 10 - - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = - 10 V ID = - 3 A - 0.071 - VGS = - 10 V ID = - 3 A, TJ = 125 °C - 0.116 - VGS = - 10 V ID = - 3 A, TJ = 175 °C - 0.139 - VGS = - 4.5 V ID = - 2.4 A VDS = - 5 V, ID = - 3 A - 0.100 - - 8 - - 493 620 - 76 95 V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 51 65 Total Gate Chargec Qg - 10.5 16 - 1.8 - - 2.6 - f = 1 MHz 5 10 15 - 5 8 VDD = - 20 V, RL = 6.7  ID  - 3 A, VGEN = - 10 V, Rg = 1  - 11 17 - 19 29 - 8 12 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = - 10 V VDS = - 25 V, f = 1 MHz VDS = - 20 V, ID = - 3 A td(on) tr td(off) tf pF nC  ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 1.5 A, VGS = 0 - - - 18 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VB2470 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 6 V 16 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 5 V 12 8 4 8 TC = 25 °C 4 VGS = 4 V TC = 125 °C 0 TC = - 55 °C 0 0 VDS - Drain-to-Source Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2 4 6 8 0 10 2.0 15 1.6 12 gfs - Transconductance (S) ID - Drain Current (A) 12 1.2 0.8 TC = 25 °C 0.4 10 TC = - 55 °C TC = 25 °C 9 TC = 125 °C 6 3 TC = 125 °C TC = - 55 °C 0 0.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.0 10 1.6 3.2 4.8 6.4 8.0 ID - Drain Current (A) Transfer Characteristics Transconductance 1.0 800 600 0.6 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 700 0.8 VGS = 4.5 V 0.4 Ciss 500 400 300 200 Coss 0.2 VGS = 10 V 100 Crss 0.0 0 0 4 8 12 ID - Drain Current (A) 16 On-Resistance vs. Drain Current 20 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 35 40 Capacitance 服务热线：400-655-8788 3 VB2470 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 3 A VDS = 20 V 8 6 4 2 ID = 3 A 2.1 VGS = 10 V 1.7 1.3 VGS = 4.5 V 0.9 0.5 0 0 2 4 6 8 Qg - Total Gate Charge (nC) 10 - 50 - 25 12 Gate Charge 150 175 On-Resistance vs. Junction Temperature 100 1.0 10 0.8 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0 25 50 75 100 125 TJ - Junction Temperature (°C) TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.6 0.4 0.2 TJ = 150 °C TJ = 25 °C 0.001 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0.0 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 40 1.0 VGS(th) Variance (V) VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.7 ID = 250 μA 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 150 175 - 42 - 44 - 46 - 48 - 50 - 50 - 25 TJ - Temperature (°C) 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Threshold Voltage Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 VB2470 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 1s 10 s, DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 VB2470 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C ) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 服务热线：400-655-8788 6 VB2470 www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 服务热线：400-655-8788 7 VB2470 www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 服务热线：400-655-8788 8 VB2470 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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