TM30P02BF6

台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM30P02BF6 General Description General Features • Low R DS(ON) • RoHS and Halogen-Free Compliant VDS =-20 V ID =-30A 司 RDS(ON) =10mΩ (typ.) @ VGS =-4.5V Applications • Load switch • PWM 公 限 100% UIS Tested 100% Rg Tested ）有 锡 BF6: PDFN2*2-6L （无 体 导 半 Marking:30P02 OR 20P02 懋 司 台 公 Absolute Maximum Ratings (TC=25℃ unless otherwise noted) 限 Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @-4.5V ID@TA=70℃ Continuous Drain Current, VGS @-4.5V IDM Pulsed Drain Current PD@TA=25℃ Rating Units -20 V ±12 V -30 A -11 A - 68 A Total Power Dissipation 18 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA RθJC Rev23.07 锡 （无 体 导 半 Thermal Data Symbol ）有 台 懋 Parameter Typ. Thermal Resistance Junction-ambient --- Max. 75 ℃/W Unit Thermal Resistance Junction-Case --- 4.2 ℃/W 1/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM30P02BF6 Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol BVDSS Parameter Conditions △BVDSS/△TJ BVDSS Temperature Coefficient Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf 司 Max. Unit --- --- V --- -0.012 --- V/℃ --- 10 15 --- 13 18 -0.4 0.65 1.0 V 公 Reference to 25℃ , ID=-1mA RDS(ON) △VGS(th) Typ. -20 Min. VGS=0V , ID=-250uA Drain-Source Breakdown Voltage 限 VGS=-4.5V , ID=-10A ）有 VGS=-2.5V , ID=-8A 锡 VGS=VDS , ID =-250uA --- 2.94 --- mV/℃ VDS=-15V , VGS=0V , TJ=25℃ --- --- 1 uA VGS=±12 V , VDS=0V --- --- ±100 nA VDS=-5V , ID=-10A --- 43 --- S --- 35 --- --- 5.0 --- --- 10 --- --- 12.0 --- 40.0 --- 30 --- 10 --- （无 体 导 VDS=-10V , VGS=-4.5V , ID=-10A 半 懋 Turn-On Delay Time 台 Rise Time Turn-Off Delay Time VDD=-10V , VGS=-4.5V , --- RG=3.3, ID=-10A --- Fall Time Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance ）有 VDS=-15V , VGS=0V , f=1MHz --- nC ns --- 2800 --- --- 690 --- --- 590 --- Min. Typ. Max. --- --- -30 A --- --- ---- A pF 锡 （无 Diode Characteristics Symbol 司 公 限 Ciss Coss m Parameter 导 体 Conditions Unit IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-10A , dI/dt=100A/µs , --- 27 --- nS Qrr Reverse Recovery Charge TJ =25℃ --- 17.8 --- nC 半 Rev23.07 台 懋 VG=VD=0V , Force Current 2/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM30P02BF6 Typical Characteristics 20 ID=-14A 司 16 RDSON (mΩ) 公 限 12 ）有 锡 8 （无 4 体 0 导 Fig.1 Typical Output Characteristics 3 懋 -IS , Source Current (A) TJ=150℃ TJ=25℃ 公 限 6 ）有 3 锡 0 0.3 0.6 0.9 体 Fig.3 Forward Characteristics of Reverse 导 半 懋 1. 4 台 1 1. 0 0. 6 0.6 0.2 Fig.4 Gate-charge Characteristics 1. 8 N o r m a l i ze d O n R 1.4 （无 1.2 -VSD , Source-to-Drain Voltage (V) 1.8 Normalized -VGS(th) 5 司 台 9 0 4 -VGS (V) Fig.2 On-Resistance vs. G-S Voltage 半 12 1 -50 0 50 100 Tj ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) vs. TJ Rev23.07 150 0.2 -50 0 50 100 TJ , J u n c t i o n T e m p℃ e)r Fig.6 Normalized RDSON vs. TJ 3/6 150 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM30P02BF6 10000 Capacitance(pF) Ciss 1000 司 Coss 公 限 Crss ）有 100 锡 F=1.0MHz 10 1 5 9 13 VDS Drain to Source Voltage(V) Normalized Thermal Response (RθJA) 0.01 Fig.8 Safe Operating Area 导 半 DUTY=0.5 0.1 （无 21 体 Fig.7 Capacitance 1 17 懋 0.2 0.1 0.05 0.02 0.01 司 台 限 SINGLE PULSE PDM ）有 0.001 锡 （无 0.0001 0.0001 公 0.001 0.01 0.1 1 TON D = TON/T T TJpeak = TA + PDM x RθJA 10 100 1000 t , Pulse Width (s) 体 Fig.9 Normalized Maximum Transient Thermal Impedance 导 半 懋 台 Fig.10 Switching Time Waveform Rev23.07 Fig.11 Gate Charge Waveform 4/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM30P02BF6 Package Mechanical Data: PDFN2*2-6L 司 公 限 ）有 锡 （无 体 导 半 懋 司 台 公 限 ）有 锡 （无 体 导 半 懋 Notes 台 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Rev23.07 5/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM30P02BF6 Important Notices and Disclaimers 司 公  Tritech-MOS Technology Corp.reserves the right to change thisdocument, 限 its products, and specifications at any time without prior notice.  Before final design, purchase, or use, customers should obtain and confirm the latest product information and specifications. ）有 锡  Tritech-MOS Technology Corp. makes no warranties, representations or warranties （无 regarding the suitability of its products for any specific purpose, and Tritech-MOS Technology Corp. does not assume any responsibility for application assistance or customer product design. 体 导  Tritech-MOS Technology Corp. does not guarantee or assume any 半 responsibility for the purchase or use of any unexpected or unauthorized products.  Any intellectual property rights of Tritech-MOS Technology Corp. are not licensed through implicate or other means. 懋 台  Products of Tritech-MOS Technology Corp. are not included as critical 司 公 限 components in life support equipment or systems without explicit written approval from Tritech-MOS Technology Corp. ）有 锡 （无 Revision history: 体 Date Rev Description 23.07 Original 导 半 2023.07.21 Page 懋 台 Rev23.07 6/6