TM60PL03DF

台懋半导体（无锡）有限公司 TM60PL03DF P-Channel Enhancement Mosfet General Description General Features • Low R DS(ON) • RoHS and Halogen-Free Compliant VDS =-25V I D =-60 A RDS(ON) = 6.5 mΩ(typ.) @ VGS =-4.5V Applications • Load switch • PWM 司 公 限 100% UIS Tested 100% Rg Tested ）有 锡 DF:DFN3x3-8L （无 D D D D 体 导 S S S G Marking: 60PL03 半 懋 台 司 Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Symbol VDS Parameter VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, -VGS @ -4.5V ID@TC=100℃ Continuous Drain Current, -VGS @ -4.5V IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range （ 体 导 RθJA 半 RθJC Rev23.07 台 懋 有 -25 V ±18 V -60 A -39 A -240 A 70 W -55 to 175 ℃ -55 to 175 ℃ ） 锡 无 Symbol Units 限 Drain-Source Voltage Thermal Data 公 Rating Parameter Typ. Max. Unit Thermal Resistance Junction-Ambient --- 62 ℃/W Thermal Resistance Junction-Case --- 3.6 ℃/W 1/7 台懋半导体（无锡）有限公司 TM60PL03DF P-Channel Enhancement Mosfet Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. -25 --- Off Characteristic Max. V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V, IGSS Gate to Body Leakage Current VDS =0V, VGS = ±12V VGS(th) RDS(on) V -1 μA - - ±100 nA V - 限 Gate Threshold Voltage VDS= VGS, ID= -250μA -0.7 -0.9 -1.2 Static Drain-Source on-Resistance VGS =-4.5V, ID =-15A - 6.5 8.0 - 8 12 - 4590 - pF - 505 - pF - 440 - pF - 46 - nC - 7.3 - nC - 10 - nC - 公 8 - ns 59 - ns 111 - ns - 43 - ns note3 （无 VGS =-2.5V, ID =-12A Dynamic Characteristics 体 导 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge 懋 半 VDS =-10V, VGS =0V, f = 1.0MHz 台 VDS =-10V, ID =-15A, VGS =-4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf - 公 - ）有 锡 On Characteristics 司 Units VDD =-10V, ID =-14A, RGEN=2.7Ω, VGS =-10V Turn-off Fall Time 无 限 有 ） 锡 Drain-Source Diode Characteristics and Maximum Ratings - - 司 mΩ IS Maximum Continuous Drain to Source Diode Forward Current - - - 60 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -240 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS =-20A - - -1.2 V TJ=25℃,ISD=-15A, VGS=0V di/dt=-100A/μs - 18 - ns - 7.7 - nC 体 导 半 trr Reverse Recovery Time Qrr Reverse Recovery Charge 懋 台 Rev23.07 （ 2/7 台懋半导体（无锡）有限公司 TM60PL03DF P-Channel Enhancement Mosfet Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 2 10 -5.5V -5.0V -4.5V -4.0V -3.5V -3.0V -2.5V 公 10 ）有 10 （无 体 -VDS(V) 10-1 100 导 100 0 半 RDS(ON) (mΩ) 103 懋 10 台 8 6 1 3 -ID(A) 100 0.2 25 Figure 5: Gate Charge Characteristics 5 4 -VGS(V) 体 导 3 台 0 10 Rev23.07 20 40 0.6 -VSD(V) 0.8 1 1.2 1.4 Figure 6: Capacitance Characteristics 104 C(pF) Ciss Crss 2 10 Qg(nC) 30 0.4 Coss 懋 1 TJ=25℃ 103 半 2 ） 锡 无 （ VDS=-10V ID=-15A 10 有 2 20 9 限 10 15 8 公 1 10 7 司 TJ=150℃ VGS=-4.5V 5 -VGS(V) 5 6 4 -IS(A) 102 VGS=-2.5V 4 0 2 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 0 TJ=150℃ 锡 1 100 0 TJ=25℃ 限 2 101 12 司 -ID (A) 50 60 101 0 -VDS(V) 10 20 30 40 50 3/7 60 台懋半导体（无锡）有限公司 TM60PL03DF P-Channel Enhancement Mosfet Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature VBR(DSS)(V) 1.3 2.5 司 RDS(on)(mΩ) 公 1.2 限 1.5 1.1 ）有 锡 1.0 1.0 （无 0.9 Tj (℃) 0 -100 -50 0 50 体 100 150 200 导 Figure 9: Maximum Safe Operating Area 懋 1000 0 50 10μs 1 Limited by R DS(on) 10ms 20 限 无 0 0 有 ） 锡 10 10 25 50 Tc (℃) 75 100 125 150 175 （ 体 导 ZthJ-C(℃/W) 半 懋 100 台 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) PDM 10-1 10-2 10-3 10-6 30 -VDS (V) 1 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 1ms DC 0.1 0.1 200 公 50 100μs TC=25℃ Single pulse 150 司 60 40 10 100 70 -ID(A) 台 100 -50 Figure 10: Maximum Continuous Drain Current vs. Case Temperature 半 -ID(A) Tj (℃) 0 -100 10-5 Rev23.07 10-4 10-3 10-2 10-1 100 101 4/7 4 台懋半导体（无锡）有限公司 TM60PL03DF P-Channel Enhancement Mosfet Package Mechanical Data:DFN3x3-8L 司 公 限 ）有 锡 （无 体 导 半 懋 司 台 公 Symbol A A1 b c D D1 D2 E E1 E2 E3 E4 E5 e K L L1 t Φ 锡 （ 导 懋 半 无 限 有 ） 体 台 Rev23.07 Mim 0.70 / 0.20 0.10 3.15 3.00 2.29 3.15 2.90 1.54 0.28 0.37 0.10 0.60 0.59 0.30 0.06 0 10 Common mm Nom 0.75 / 0.30 0.152 3.30 3.15 2.45 3.30 3.05 1.74 0.48 0.57 0.20 0.65 0.69 0.40 0.125 0.075 12 Max 0.85 0.05 0.40 0.25 3.45 3.25 2.65 3.45 3.20 1.94 0.65 0.77 0.30 0.70 0.89 0.50 0.20 0.13 14 5/7 台懋半导体（无锡）有限公司 TM60PL03DF P-Channel Enhancement Mosfet PDFN3×3-8L SOP-8L 司 公 限 ）有 锡 （无 PDFN3×3-8L 体 PDFN3×3-8L 导 半 懋 司 台 公 限 有 ） PDFN3×3-8L 锡 无 （ 体 导 半 懋 台 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 13''Dia Ø330.00 100.00 13.00 R135.00 R55.00 R6.50 12.00 14.00 G.W.(kg) REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) 5,000 pcs 13 inch 10,000 pcs 370×355×52 50,000 pcs 400×360×368 Rev23.07 6/7 台懋半导体（无锡）有限公司 TM60PL03DF P-Channel Enhancement Mosfet Important Notices and Disclaimers 司 公  Tritech-MOS Technology Corp.reserves the right to change thisdocument, 限 its products, and specifications at any time without prior notice.  Before final design, purchase, or use, customers should obtain and confirm the latest product information and specifications. ）有 锡  Tritech-MOS Technology Corp. makes no warranties, representations or warranties （无 regarding the suitability of its products for any specific purpose, and Tritech-MOS Technology Corp. does not assume any responsibility for application assistance or customer product design. 体 导  Tritech-MOS Technology Corp. does not guarantee or assume any 半 responsibility for the purchase or use of any unexpected or unauthorized products.  Any intellectual property rights of Tritech-MOS Technology Corp. are not licensed through implicate or other means. 懋 台  Products of Tritech-MOS Technology Corp. are not included as critical 司 公 限 components in life support equipment or systems without explicit written approval from Tritech-MOS Technology Corp. 有 ） 锡 无 Revision history: Date Rev 体 （ 导 2023.07.14 23.07 Description Page Original 半 懋 台 Rev23.07 7/7