TM09P03MI

台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM09P03MI General Description General Features • Low R DS(ON) • RoHS and Halogen-Free Compliant RDS(ON) = 20 mΩ (typ .) @ VGS=-10V VDS = -30V I D =-8.8 A Applications • Load switch • PWM 司 公 限 ）有 100% UIS Tested 100% Rg Tested 锡 MI:SOT-23-3L （无 体 D 导 S 半 G 懋 Marking: 30P09 司 台 公 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 ID@TA=100℃ Continuous Drain Current, VGS @ IDM Pulsed Drain EAS Rating 限 Units -30 V ±20 V -8.8 A -5.0 A -36 A 25 mJ 3 W ）有 锡 -10V1 （无 Current2 Single Pulsed Avalanche Energy 体 note2 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ 导 Thermal Data Symbol RθJA RθJC Rev23.05 半 台 懋 Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-Case1 1 Typ. Max. Unit --- 48 ℃/W --- --- ℃/W 1/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM09P03MI Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. 限 Units 公 - - V - - -1 μA - - ±100 nA -1.0 -1.5 -2.0 V VGS =-10V, ID =-9A - 20 25 VGS =-4.5V, ID =-5A - 26 33 - 900 - pF - 125 - pF - 109 - pF - 42 - nC - 8.8 - nC 7.3 - nC - 13 - ns - 15 - ns - 198 - ns - 98 - ns -8.8 A V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V, IGSS Gate to Body Leakage Current VDS =0V, VGS = ±20V Gate Threshold Voltage RDS(on) Note3 锡 VDS= VGS, ID= -250μA （无 Static Drain-Source on-Resistance 体 Dynamic Characteristics 导 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge 半 VDS = -15V, VGS = 0V, f = 1.0MHz 懋 台 VDS= -15V, ID = -8A, VGS = -10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf -30 ）有 On Characteristics VGS(th) - VDD = -15V, ID = -1A, VGS=-10V, RGEN=6Ω 锡 （无 司 公 限 ）有 Turn-off Fall Time 司 Max. Off Characteristic Typ. mΩ Drain-Source Diode Characteristics and Maximum Ratings 体 IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current - - -36 A VSD Drain to Source Diode Forward Voltage - -0.8 -1.2 V 导 半 懋 - VGS = 0V, IS = -9A - 台 Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=-15V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-10A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Rev23.05 2/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM09P03MI Typical Performance Characteristics -ID (A) 25 10V 司 Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 25 4.5V 公 20 3V 15 5 （无 5 VGS=1V 体 -VDS (V) 0 0 0.5 1.0 1.5 2.0 导 2.5 Figure 3:On-resistance vs. Drain Current 半 RDS(ON) (mΩ) 35 懋 30 20 -VGS (V) 0 0.5 -ID(A) 8 10 12 8 体 导 半 6 台 2 0 0 Rev23.05 24 36 公 ）有 锡 0.1 0.0 0.2 0.4 VSD (V) 0.6 0.8 1.0 105 48 1.2 1.4 C(pF) 104 C iss C oss 102 Q g(nC) 12 4.5 司 103 懋 4 4.0 Figure 6: Capacitance Characteristics -VGS (V) VDS =-15V ID =-8A 3.5 限 （无 Figure 5: Gate Charge Characteristics 10 3.0 TJ =-50℃ TJ=-25℃ 1 5 6 2.5 -IS(A) 10 4 2.0 Figure 4: Body Diode Characteristics 10 VGS =-10V 2 1.5 TJ =150℃ 15 0 0 1.0 VGS =-4.5V 台 25 0 125℃ 锡 10 10 25℃ ）有 15 2V TC =-55℃ 限 20 60 101 0 C rss -VDS (V) 5 10 15 20 25 3/7 30 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM09P03MI Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) 1.3 2.5 1.2 司 RDS (on) 公 限 2.0 ）有 1.1 1.5 锡 1.0 （无 1.0 0.9 0 -100 Tj (℃) -50 0 50 100 体 150 导 Figure 9: Maximum Safe Operating Area 200 半 -ID(A) 懋 102 1ms 10 Limited by RDS(on) 10-2 0.01 TA=25℃ Single pulse 0.1 50 100 6.0 100ms 4.5 DC -VDS (V) 1 公 限 ）有 锡 （无 100 0 0 25 50 TA (℃) 75 100 125 体 导 半 懋 10 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse -1 10-2 -4 10 10-3 Rev23.05 10-2 TP(s) 10-1 P DM 台 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM*ZthJA+T A 100 101 200 司 1.5 10 150 -ID(A) 3.0 ZthJ-A (℃/W) 1 10 0 7.5 10ms Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 102 -50 9.0 0 10-1 Tj (℃) Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature 10.5 台 101 0.5 -100 102 4/7 150 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM09P03MI Package Mechanical Data: SOT-23-3L 司 公 限 ）有 锡 （无 体 导 半 懋 司 台 Symbol A A1 A2 b c D E1 E e e1 L θ Rev23.05 公 Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° 限 （无 锡 体 导 半 台 懋 ）有 Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° 5/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM09P03MI SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm 司 Cov er Tape MI:SOT-23-3L 公 3,000 pcs per reel 限 ）有 锡 15 reels per box 45,000 pcs per box （无 235mm Carrie r Tape 体 214 mm 半 台 440 mm 210 m 懋 m 4m 0m 导 21 44 4 boxes per carton 180,000 pcs per carton mm 司 公 SOT-23-3L Embossed Carrier Tape D 限 ）有 锡 （无 体 导 半 懋 SOT-23-3L 台 D SOT-23-3L Tape Leader and Trailer Rev23.05 6/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM09P03MI Important Notices and Disclaimers 司 公  Tritech-MOS Technology Corp.reserves the right to change thisdocument, 限 its products, and specifications at any time without prior notice.  Before final design, purchase, or use, customers should obtain and confirm the latest product information and specifications. ）有 锡  Tritech-MOS Technology Corp. makes no warranties, representations or warranties （无 regarding the suitability of its products for any specific purpose, and Tritech-MOS Technology Corp. does not assume any responsibility for application assistance or customer product design. 体 导  Tritech-MOS Technology Corp. does not guarantee or assume any 半 responsibility for the purchase or use of any unexpected or unauthorized products.  Any intellectual property rights of Tritech-MOS Technology Corp. are not licensed through implicate or other means. 懋 台  Products of Tritech-MOS Technology Corp. are not included as critical 司 公 限 components in life support equipment or systems without explicit written approval from Tritech-MOS Technology Corp. ）有 锡 （无 Revision history: 体 Date Rev Description 23.05 Original 导 半 2023.05.09 Page 懋 台 Rev23.05 7/7