SMFJ5.0A

SMFJ5.0A - SMFJ170CA Product specification SMFJ5.0A - SMFJ170CA VOLTAGE RANGE: 8 .0 V Features POWER: 200Wa tts Mechanical Data  For surface mounted applications  Low profile package  Low incremental surge resistance, excellent  clamping capability  200W peak pulse power capability with a10/1000 μs wave from,repetition rate (dutycycle):0.01%  Case: JEDEC SOD- 123FL, molded plastic over passivated chip Polarity: Color band denotes positiveend( cathode )  except for bidirectional  Mounting position: Any  Weight: 0.006 ounces, 0.02 gram  High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals Reference News PACKAGE OUTLINE PIN CONFIGURATION SOD-123FL Unipolar SOD-123FL Bipolar Maximum Ratings TA = 25℃ unless otherwise specified Symbol Characteristic Value Unit Maximum PPK Dissipation ( PW - 1 0 / 1 0 0 0 μ s) P PK 200 W Maximum PPK Dissipation @ Ta = 2 5 ℃ ( PW - 8 / 1 0 μ s) ( Note2 ) P PK 1000 W PD 385 DC Power Dissipation @ Ta= 2 5 ℃ ( Note 3 ) Derate above 2 5 ℃ W 4.0 mW/ ℃ Thermal Resistance, Junction to Ambient ( Note3 ) RӨ JA 325 ℃ /W Thermal Resistance, Junction to Lead ( Note 3 ) RӨ JL 26 ℃ /W TJ , TSTG -55 to + 150 ℃ Operating Junction and Storage Temperature Range Notes : ( 1 ) Non−repetitive current pulse at Ta = 25°C, per waveform of Fig. 2. ( 2 ) Non− repetitive current pulse at Ta = 2 5 ° C, per waveform of Fig. 5 . ( 3 ) Mounted with recommended minimum pad size , DC board FR4 . Copyright© Msksemi Incorporated www.msksemi.com SMFJ5.0A - SMFJ170CA R everse Marking TYPE (Uni) (Bi) SMFJ5.0A SMFJ6.0A SMFJ6.5A SMFJ5.0CA SMFJ6.0CA SMFJ6.5CA SMFJ7.0A SMFJ7.5A SMFJ8.0A SMFJ8.5A SMFJ9.0A SMFJ10A SMFJ11A SMFJ12A SMFJ13A SMFJ14A SMFJ15A SMFJ16A SMFJ17A SMFJ18A SMFJ20A SMFJ22A SMFJ24A SMFJ26A SMFJ28A SMFJ30A SMFJ33A SMFJ36A SMFJ40A SMFJ43A SMFJ45A SMFJ48A SMFJ51A SMFJ54A SMFJ58A SMFJ60A SMFJ64A SMFJ7.0CA SMFJ7.5CA SMFJ8.0CA SMFJ8.5CA SMFJ9.0CA SMFJ10CA SMFJ11CA SMFJ12CA SMFJ13CA SMFJ14CA SMFJ15CA SMFJ16CA SMFJ17CA SMFJ18CA SMFJ20CA SMFJ22CA SMFJ24CA SMFJ26CA SMFJ28CA SMFJ30CA SMFJ33CA SMFJ36CA SMFJ40CA SMFJ43CA SMFJ45CA SMFJ48CA SMFJ51CA SMFJ54CA SMFJ58CA SMFJ60CA SMFJ64CA SMFJ70A SMFJ75A SMFJ78A SMFJ85A SMFJ90A SMFJ100A SMFJ110A SMFJ120A SMFJ130A SMFJ150A SMFJ160A SMFJ170A SMFJ70CA SMFJ75CA SMFJ78CA SMFJ85CA SMFJ90CA SMFJ100CA SMFJ110CA SMFJ120CA SMFJ130CA SMFJ150CA SMFJ160CA SMFJ170CA (Uni) (Bi) KE KG KK KM KP KR KT KV KX KZ LE LG LK LM FE FG FK FM FP FR FT FV LP LR LT LV LX LZ ME MG MK MM MP MR MT MV MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR Copyright© Msksemi Incorporated FX FZ HE HG HK HM HP HR HT HV HX HZ JE JG JK JM JP JR JT JV JX JZ XE XG XK XM XP XR XT XB XX XZ TE TG TK TM TP TR Stand-Off Voltag e VRWM ( V) Breakdown Br e akd o w n Voltage Voltage Max. @ IT Min. @IT VBR MIN( 5.0 6.0 6.5 6.40 6.67 7.22 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 V) VBR MAX ( V) Test Current IT (mA) M axi m u m Reverse C l a m p i n g Leakage V o l t a g e @ IPP @ VRWM VC(V) IR(uA) Peak IPP ( A ) 10 10 10 400 400 250 9.2 10.3 11.2 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 7.00 7.37 7.98 8.60 9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 100 50 25 10 5.0 2.5 2.5 2.5 1.0 1.0 1.0 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 21.7 19.4 17.9 16.7 15.5 14.7 13.9 13.0 11.8 11.0 10. 1 9.3 8.6 8.2 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31. 1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71. 1 77.8 83.3 86.7 94.4 100 111 122 133 144 167 178 189 19.7 20.9 22. 1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49. 1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86.0 92. 1 95.8 104 111 123 135 147 159 185 197 209 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 7.7 7.2 6.8 6.2 5.6 5.1 4..8 4.4 4.1 3.8 3.4 3.1 2.9 2.8 2.6 2.4 2.3 2.1 1.8 1.7 1.5 1.4 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.7 0.6 www.msksemi.com P PPM ,PEAK PULSE FORWARD ,kW Fig.1 Peak Pulse Power Rating Curve 10 Non-Repetive Pulse.Wavefom Shown in Figure.3 T A=25°C 1.0 0.1 0.01 0.1 PEAK PULSE POWER(PPP)OR CURRENT(Ipp) DERATINGIN PERCENTAGE% SMFJ5.0A - SMFJ170CA Fig.2 Forward Current Derating Curve 100 80 60 40 20 0 1 10 100 1000 25 10000 T A =25°C 100 Peak Value Pulse Width (td) is Defined as the Point where the Peak. Current Decayst to 50% of Ipp I ppm 80 Half Value-I pp /2 60 10/1000usec Waveform as Defined bye R.E.A. 40 20 I FSM ,PEAK FORWARD SURGE CURRENT, AMPERES I ppm ,Peak Pulse Current (%) Fig.3 Pulse Waveform t f =10usec 75 100 125 150 175 T A ,AMBIENT TEMPERATURE,°C td,PULSE WIDTH ,us 120 50 Fig.4 Maximum Non-Repetitive Peak Forward Surge Current 30 25 20 15 10 05 T J =T J max 8.3ms Single Half Sinepwav e JEDEC Method 0 0 0 2.0 1.0 T,TIME,ms Copyright© Msksemi Incorporated 3.0 4.0 1 10 100 Number of Cycles at 60Hz www.msksemi.com SMFJ5.0A - SMFJ170CA 1.8± 0.3 0.95 ±0.25 PACKAGEMECHANICALDATA 1.15±0.25 0.05-0.30 2.75 ±0.25 0.6±0.3 3.7 ±0.30 Dimensions in millimeters Suggested Pad Layout 2.85 Note: 1.4 1.Controlling dimension:in millimeters. 2.General tolerance:±0.05mm. 3.The pad layout is for reference purposes only. 1.2 REELSPECIFICATION P/N SMFJ5.0A-SMFJ170CA Copyright© Msksemi Incorporated PKG QTY SOD- 123FL 3000 www.msksemi.com SMFJ5.0A - SMFJ170CA Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. Copyright© Msksemi Incorporated www.msksemi.com