RB520S-30

RB520S-30 Silicon Epitaxial Planar Schottky Barrier Diode SOD-523 DESCRIPTION PIN 1 Cathode 2 Anode   1       B   Features 2     • Extremely small surface mounting type • High reliability Top View Marking Code: "B" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VR 30 V Mean Rectifying Current IF(AV) 200 mA Peak Forward Surge Current (60 Hz for 1 Cyc.) IFSM 1 A Tj 125 O C Tstg - 40 to + 125 O C Symbol Max. Reverse Voltage Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Unit   Forward Voltage at IF = 200 mA VF 0.6 Reverse Current at VR = 10 V IR 1 V   µA Note: ESD sensitive product handling required. 1 RB520S-30 Typical Characteristics Reverse Characteristics Forward Characteristics 600 1000 100 100 o Ta =2 5 o C REVERSE CURRENT IR 10 Ta =1 00 FORWARD CURRENT IF o C (uA) (mA) Ta=100 C 1 0.1 0.01 10 1 o Ta=25 C 0.1 0.01 0 100 200 300 400 500 600 700 800 0 5 10 FORWARD VOLTAGE VF (mV) 15 20 REVERSE VOLTAGE VR 25 30 (V) Power Derating Curve Capacitance Characteristics 100 200 (mW) 150 PD 30 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 10 3 1 100 50 0 0 5 10 REVERSE VOLTAGE VR 15 (V) 20 0 25 50 75 AMBIENT TEMPERATURE Ta 100 125 ( ℃) 2 RB520S-30 PACKAGE OUTLINE SOD-523 Plastic surface mounted package; 2 leads           ∠                     ALL ROUND             A       C             HE   D                           UNIT mm     bp   E                             A       A 0.70 0.60 bp 0.4 0.3 C D 0.135 0.100 1.25 1.15 E 0.85 0.75 HE 1.7 1.5 ∠ V   0.1 5 O 3