S1MF

山东晶导微电子有限公司 S1AF THRU S1MF Jingdao Microelectronics Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0.00095oz DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code： S1A-S1M Simplified outline SMAF and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols S1AF S1BF S1DF S1GF S1JF S1KF S1MF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 15 pF RθJA RθJC 80 27 °C/W T j , T stg -55 ~ +150 °C Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance Typical Thermal Resistance （1） （2） Operating and Storage Temperature Range （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMAF-A-S1AF~S1MF-1A1KV Page 1 of 3 山东晶导微电子有限公司 S1AF THRU S1MF Jingdao Microelectronics Fig.2 Typical Instaneous Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 175 Instaneous Reverse Current ( μ A) Fig.1 Forward Current Derating Curve 100 T J =150°C 10 T J =125°C T J =100°C 1.0 T J =75°C 0.1 T J =25°C 0.01 0 Junction Capacitance ( pF) TJ = 2 5° C 00 =1 TJ =1 25 °C °C 0.5 TJ Instaneous Forward Current (A) 1.0 0.8 0.9 600 800 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 0.2 0.1 0.6 400 200 Instaneous Reverse Voltage (V) Case Temperature (°C) 100 T J =25°C 10 1 0.7 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 S1AF THRU S1MF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) 2016.01 ∠ JD601114B6 Marking code S1AF S1A S1BF S1B S1DF S1D S1GF S1G S1JF S1J S1KF S1K S1MF S1M Page 3 of 3