1N914WS

Silicon Epitaxial Planar Switching Diode PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current IF(AV) 200 mA IFSM 0.5 1 A Power Dissipation Ptot 200 Thermal Resistance Junction to Ambient RθJA 625 Tj 150 O Tstg - 55 to + 150 O Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs Junction Temperature Storage Temperature Range mW C/W O C C Electrical Characteristics (Ta = 25 OC) Parameter Forward Voltage at IF = 10 mA Reverse Breakdown Voltage at IR = 5 µA at IR = 100 µA Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, TJ = 150 OC Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, RL = 100 Ω, IRR = 3 mA Symbol Min. Max. Unit VF - 1 V V(BR)R V(BR)R 75 100 - V V IR - 25 5 50 nA µA µA Ctot - 4 pF trr - 50 ns 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Leakage current vs. junction temperature Forward characteristics 10 3 10 4 5 2 102 103 Tj=100 C I R (nA) I F ( m A) 5 10 Tj=25 C 1 2 10 2 5 2 10-2 10 5 10-1 0 1 VR=20V 2 2 1 VF (V) 0 200 100 Tj ( C) Dynamic forward resistance vs. forward current Reverse capacitance vs. reverse voltage 4 10 Tj=25 C f=1MHz 1.1 Tj=25 C f=1kHz 5 2 3 10 ) 5 0.9 rF ( Ctot (VR) Ctot (0 V) 1.0 2 102 5 2 0.8 10 0.7 2 5 1 10-2 0 2 4 6 8 10 10-1 1 10 102 I F (mA) VR (V) 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.