TM10P10D

台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM10P10D General Features General Description • Low R DS(ON) • RoHS and Halogen-Free Compliant VDS =-100V ID =-10 A RDS(ON) = 180 mΩ(typ.) @ VGS =-10V Applications • Load switch • PWM 司 公 100% UIS Tested 100% Rg Tested 限 有 D:TO-252-3L ） 锡 D 无 D （ G 体 Marking: 10P10 S 导 半 Absolute Maximum Ratings (TC = 25°C Unless Otherwise Noted) 懋 Symbol VDS VGS 台 Parameter Rating Drain-Source Voltage -100 ID@TC=25℃ Gate-Source Voltage ID@TC=100℃ ±20 Continuous Drain Current, VGS @ - 10V1 Continuous Drain Current, VGS @ - 10V1 司 公 有 ） V V 限 -10 Units A -7 A -42 A 48.1 mJ -14 A 10 W IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation3 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ 无 （ 体 导 Thermal Data 半 Symbol RθJA RθJC Rev24.06 锡 台 懋 Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-Case1 1 Typ. Max. Unit --- 62 ℃/W --- 6.6 ℃/W 1/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM10P10D Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit -100 --- --- V VGS=-10V , ID=-3A --- 180 190 VGS=-4.5V , ID=-2A --- --- VGS=VDS , ID =-250uA -1 VGS=0V , ID=-250uA --- --- -1 --- --- -30 --- --- ±100 nA --- 13 ---  --- 19 --- --- 3.4 --- --- 2.9 --- --- 9 --- VDD=-30V , VGS=-10V , RG=3.3, --- 6 --- ID=-1A --- 39 --- --- 33 --- --- 1228 --- --- 41 --- 29 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz Qg Total Gate Charge (-10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Td(off) Tf Ciss VDS=-80V , VGS=0V , TJ=85℃ Fall Time ） 锡 无 （ 体 导 半 Input Capacitance 有 VDS=-50V , VGS=-10V , ID=-2A Turn-Off Delay Time 懋 VDS=-30V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance 台 IS VSD Parameter Continuous Source 有 Conditions Current1,5 VG=VD=0V , Force Current ） Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ 锡 -3 司 --- uA nC ns pF 公 Min. Typ. Max. Unit --- --- -10.0 A --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.5mH,IAS=-14A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 无 （ 体 导 半 懋 台 Rev24.06 V --- 限 Diode Characteristics Symbol -2 限 VDS=-80V , VGS=0V , TJ=25℃ Drain-Source Leakage Current Rise Time m 公 IDSS Tr 司 --- 2/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM10P10D Channel Typical Characteristics 司 公 限 有 ） 锡 Fig.1 Typical Output Characteristics 无 （ 体 Fig.2 On-Resistance vs G-S Voltage 导 半 司 懋 公 台 限 有 ） 锡 无 （ Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 体 导 半 懋 台 Fig.5 Normalized VGS(th) vs TJ Rev24.06 Fig.6 Normalized RDSON vs TJ 3/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM10P10D 司 公 限 有 ） 锡 无 Fig.7 Capacitance Normalized Thermal Response (RθJC) DUTY=0.5 0.1 Fig.8 Safe Operating Area 导 0.3 0.1 （ 体 1 半 司 懋 台 0.05 0.02 有 0.01 ） SINGLE PULSE 0.01 0.00001 0.0001 0.001 无 锡 0.01 公 限 PDM TON D = TON/T T TJpeak = TC + PDM x RθJC 0.1 1 t , Pulse Width (s) （ Fig.9 Normalized Maximum Transient Thermal Impedance 体 导 半 懋 台 Fig.10 Switching Time Waveform Rev24.06 Fig.11 Unclamped Inductive Waveform 4/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM10P10D Package Mechanical Data: TO-252-3L 司 公 限 有 ） 锡 无 （ 体 导 半 Symbol 懋 台 Dimensions In Millimeters 司 Dimensions In Inches 公 Min. Max. Min. 2.200 2.400 0.087 A1 0.000 0.127 b 0.660 0.860 有 0.005 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 A D2 E 6.000 e 2.186 L 9.800 导 半 L1 懋 L2 L3 L4 体 台 ） 锡 无 （ 4.830 TYP. 0.000 限 0.094 0.190 TYP. 6.200 0.236 0.244 2.386 0.086 0.094 10.400 0.386 0.409 2.900 TYP. 1.400 Max. 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. 0.600 1.000 0.024 0.039 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 Φ V Rev24.06 5.350 TYP. 0.211 TYP. 5/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM10P10D TO-252-3L Embossed Carrier Tape 司 11.0±0.1 公 限 有 ） 3.0±0.2 7.0±0.1 锡 无 （ T O - 25 2- 3 L R e e l 体 导 半 司 懋 公 台 限 有 ） 锡 无 （ 体 导 半 AllDimensionsareinmm 懋 台 Pa c k age Reel Specifications T a pe R e el D i a . Width A - Ma x 16 33 0 TO-252-3L Inside Thickness W . 18 0±1.5 Reel Thickness T - m ax 20 Packaging Information REEL Reel Size Bo x B o x S i z e ( mm) Carto n Carton Size(mm) 2,500 pcs 13 inch 5.000 pcs 355×370×50 25.000pcs 380×275×380 Rev24.06 G .W . k g) 6/7 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM10P10D Important Notices and Disclaimers  Tritech-MOS Technology Corp.reserves the right to change thisdocument, 司 its products, and specifications at any time without prior notice.  Before final design, purchase, or use, customers should obtain and confirm the latest product information and specifications. 公 限 有  Tritech-MOS Technology Corp. makes no warranties, representations or warranties regarding the suitability of its products for any specific purpose, and Tritech-MOS Technology Corp. does not assume any responsibility for application assistance or customer product design. ） 锡 无  Tritech-MOS Technology Corp. does not guarantee or assume any （ responsibility for the purchase or use of any unexpected or unauthorized products.  Any intellectual property rights of Tritech-MOS Technology Corp. are not licensed through implicate or other means. 体 导 半  Products of Tritech-MOS Technology Corp. are not included as critical 懋 components in life support equipment or systems without explicit written approval from Tritech-MOS Technology Corp. 台 司 公 限 有 ） Revision history: Date Rev 2024.06.09 24.06 锡 （ 无 Description Page Original 体 导 半 懋 台 Rev24.06 7/7