S2AW

S2AW THRU S2MW Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Features SOD-123FL  Glass Passivated Chip Junction  Ideal for surface mouted applications  Low reverse leakage  Metallurgically bonded construction 0.079(2.00) 0.063(1.60) 0.046 (1.20) 0.031 (0.80) 0.118(3.00) 0.098(2.50)  High temperature soldering guaranteed:  250°C/10 seconds,0.375”(9.5mm) lead length, 5 0.052(1.35) 0.035(0.90) lbs. (2.3kg) tension 0.012(0.30) 0.002(0.05) 0.039(1.00) 0.012(0.30) 0.158(4.00) 0.134(3.45) Mechanical Data Case : JEDEC 6OD-123FL molded plastic body Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.0053 ounce, 0.015grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM VRMS VDC S2AW S2BW S2DW S2GW S2JW S2KW S2MW 2A1 2A2 2A3 2A4 2A5 2A6 2A7 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS V V V Maximum average forward rectified current at TL(see fig.1) I(AV) 2.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 50 A Maximum instantaneous forward voltage at 2.0A VF V Maximum DC reverse current at rated DCblocking voltage IR 1.1 5 50 uA TA=25℃ TA=125℃ 25 pF Typical thermal resistance (NOTE 2) CJ RJA RθJC 75 22 ℃/W Operating junction temperature range TJ -55 to +150 ℃ TSTG -55 to +150 ℃ Typical junction capacitance (NOTE 1) Storage temperature range Note: 1.Averaged over any 20ms period. 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted http://www.microdiode.com Rev:2025A4 Page :1 S2AW THRU S2MW Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere Typical Characterisitics Fig.2 Typical Instaneous Reverse Characteristics Instaneous Reverse Current (μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 2.4 2.0 1.6 1.2 0.8 0.4 0 Resistive or Inductive Load 25 50 75 100 125 150 100 T J =125 °C 10 1.0 T J =25 °C 0.1 175 0 Case Temperature (°C) 80 100 Junction Capacitance (pF) Instaneous Forward Current (A) 60 100 Fig.4 Typical Junction Capacitance T J =25 °C 1.0 0.1 0.5 40 percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Forward Characteristic 10 20 T J =25 °C 10 1 0.7 0.9 1.1 1.3 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surge Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surge Current 70 60 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 0 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2025A4 Page :2 S2AW THRU S2MW Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SOD-123FL A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 E F B A W P D2 T D1 C W1 D Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) SOD-123FL 7" 3,000 4.0 45,000 190*190*190 178 400*400*220 180,000 Suggested Pad Layout Unit (inch) Symbol Unit (mm) A 1.2 0.047 B 0.047 C 1.2 3.2 0.126 D 2 0.079 E 4.4 0.173 Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A4 Page :3