WNM2046E
WNM2046E
Single N-Channel, 20V, 0.8A, Power MOSFET
VDS (V)
Http://www.sh-willsemi.com
Max. RDS(on) (mΩ)
500 @ VGS=4.5V
570 @ VGS=3.1V
20
700 @ VGS=2.5V
1500 @ VGS=1.8V
ESD Rating：2000V HBM
DFN1006-3L
Description
D
The WNM2046E is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion,
power switch and charging circuit. Standard Product
WNM2046E is Pb-free.
G
S
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN1006-3L
6
= Device Code
*
= Month (A~Z)
Marking
Applications
Order information
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Will Semiconductor Ltd.
Device
Package
Shipping
WNM2046E-3/TR
DFN1006-3L
10K/Tape&Reel
1
Nov,2020- Rev.1.1
WNM2046E
Absolute Maximum ratings
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±10
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25°C
d
800
ID
TA=70°C
c
640
IDM
TA=25°C
a
3000
480
PD
TA=70°C
Operating Junction Temperature
Storage Temperature Range
305
Unit
V
mA
mA
mW
TJ
-55 to 150
°C
TSTG
-55 to 150
°C
Maximum
Unit
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
a
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
216
RθJA
262
464
RθJA
°C/W
580
2
2
The value of RθJA is measured with the device mounted on 1-inch (6.45cm ) with 2oz.(0.071mm thick)
2
Copper pad on a 1.5*1.5 inch , 0.06-inch thick FR4 PCB, in a still air environment with TA =25°C. The
power dissipation PD is based on RθJA value and the TJ(MAX)=150°C. The value in any given application is
determined by the user's specific board design, and the maximum temperature of 150°C may be used if
the PCB allows it to.
b
The value of RθJA is measured with the device mounted on FR-4 minimum pad board, in a still air
environment with TA =25°C. The power dissipation PD is based on RθJA value and the TJ(MAX)=150°C. The
value in any given application is determined by the user's specific board design, and the maximum
temperature of 150°C may be used if the PCB allows it to.
c
Repetitive rating, ~10us pulse width, duty cycle ~1%, keep initial TJ =25°C, the maximum allowed
junction temperature of 150°C.
d
The maximum current rating by source bonding technology.
e
The static characteristics are obtained using ~380us pulses, duty cycle ~1%.
Will Semiconductor Ltd.
2
Nov,2020- Rev.1.1
WNM2046E
o
Electronics Characteristics (Ta=25 C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS =16V, VGS = 0V
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS = ±10V
VGS(TH)
VGS = VDS, ID = 250uA
V
1
uA
±10
uA
0.7
1.0
V
VGS =4.5V, ID =0.55A
340
500
VGS =3.1V, ID =0.35A
380
570
VGS =2.5V, ID =0.25A
425
700
VGS =1.8V, ID =0.15A
560
1500
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
RDS(on)
0.4
mΩ
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS
=
0
V,
f
=
1.0MHz, VDS = 10 V
VGS = 4.5 V, VDS =
10V,
ID =0.55 A
29
11
pF
4
1.1
0.11
nC
0.15
0.32
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
VGS = 4.5 V, VDS = 10
V,
ID=0.55A , RG=6Ω
5
5.8
ns
15.4
3.6
BODY DIODE CHARACTERISTICS
Forward Voltage
Will Semiconductor Ltd.
VSD
VGS = 0 V, IS = 0.8A
3
0.9
1.5
V
Nov,2020- Rev.1.1
DS
GS
V
-Drain-to-
WNM2046E
Source Volta
ge(V)
o
Ice Current
-Drain-to-Sour
(A)
Typical Characteristics (Ta=25 C, unless otherwise noted)
=8V
=6V
V
=5.5V
4
2
0
5
0
15
10
IDS -Drain to Source Current(A)
3.0
VGS=4.5V
2.5
2.0
VGS=3.1V
VGS=2.5V
1.5
1.0
VGS=1.8V
0.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.5
Output Characteristics
o
T=-50 C
o
T=25 C
2.0
1.5
o
T=150 C
1.0
0.5
0.0
0.0
2.0
VDS=2V
0.5
VDS-Drain-to-Source Voltage(V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS -Gate to Source Voltage(V)
e
Transfer Characteristics
500
e
700
RDS(ON)-On Resistance(m)
RDS(ON)-Resistance(m)
ID=0.55A
450
400
VGS=3.1V
350
VGS=4.5V
300
250
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
600
500
400
300
200
2.0
1
2
3
IDS-Drain to Source Current(A)
e
Gate Threshold Voltage Normalized
VGS=4.5V
ID=0.55A
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
6
7
8
9
10
On-Resistance vs. Junction Temperature
e
1.3
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
Temperature (oC)
Temperature (oC)
Will Semiconductor Ltd.
5
On-Resistance vs. Gate-to-Source Voltage
1.8
1.6
4
VGS-Gate to Source Voltage (V)
On-Resistance vs. Drain Current
RDS(ON)-On Resistance Normalized
DS
ID-Drain-to-Source Current(A)
3.0
e
Threshold Voltage vs. Temperature
4
Nov,2020- Rev.1.1
WNM2046E
5
50
ISD-Source to Drain Current (A)
VGS=0
f=1MHz
C-Capacitance(pF)
40
30
Ciss
20
Coss
10
Crss
0
0
2
4
6
8
4
3
o
T=150 C
2
o
T=25 C
1
o
T=-50 C
0.3
10
0.4
VDS-Drain to Source Voltage(V)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VSD-Source to Drain Voltage (V)
Capacitance
Body Diode Forward Voltage
e
10
30
O
TJ(Max)=25 C
O
TA=25 C
ID-Drain Current (A)
Power(W)
25
20
15
10
100us
1
Limit by Rdson
1ms
10ms
0.1
DC
o
1s
o
TA=25 C
5
10s
Single Pulse
1E-4
1E-3
0.01
0.1
1
10
100
0.01
0.01
1000
100ms
TJ(MAX)=150 C
0.1
1
10
Pulse width(s)
VDS-Drain to Source Voltage(V)
Single Pulse power
Safe Operating Power
100
VGS-Gate to Source Voltage (V)
4.5
4.0
3.5
VGS=4.5V
VDS=10V
ID=0.55A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.3
0.6
0.9
1.2
1.5
Gate Charge Characteristics (nC)
Gate Charge Characteristics
Will Semiconductor Ltd.
5
Nov,2020- Rev.1.1
WNM2046E
Normalized Effective Transient
Thermal Impedance
10
In Descending Order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse
1
0.1
single pulse
0.01
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Transient Thermal Response (Junction-to-Ambient)
Will Semiconductor Ltd.
6
Nov,2020- Rev.1.1
WNM2046E
PACKAGE OUTLINE DIMENSIONS
DFN1006-3L
L
L1
L
b1
E
b2
e1
D
e2
(Ⅰ)
TOP VIEW
BOTTOM VIEW
(Ⅱ)
A
A1
(Ⅱ)
(Ⅰ)
SIDE VIEW
Symbol
Dimensions in Millimeters
Min.
Typ.
Max.
A
0.36
-
0.50
A1
0.00
-
0.05
D
0.95
1.00
1.05
E
0.55
0.60
0.65
b1
0.10
0.15
0.20
b2
0.40
0.50
0.60
L
0.20
0.25
0.30
L1
0.20
0.30
0.40
e1
0.35Ref
e2
0.65Ref
Will Semiconductor Ltd.
7
Nov,2020- Rev.1.1
WNM2046E
TAPE AND REEL INFORMATION
RD
Reel Dimensions
W
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
RD
Reel Dimension
W
Overall width of the carrier tape
P1
Pitch between successive cavity centers
Pin1
Pin1 Quadrant
Will Semiconductor Ltd.
User Direction of Feed
7inch
13inch
1 8mm
12mm
16mm
2mm
4mm
8mm
Q1
Q2
Q3
8
Q4
Nov,2020- Rev.1.1
