SMDJ10AH

SMDJ10AH – SMDJ100AH Taiwan Semiconductor 3000W, 10V - 100V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified Ideal for automated placement Glass passivated chip junction Excellent clamping capability Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Fast response time: Typically less than 1.0ps Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 10 - 100 V VBR 11.1 - 123 V PPK 3000 W TJ MAX 175 °C Package DO-214AB (SMC) Configuration Single die APPLICATIONS ● Immunization of sensitive devices in telecommunications, consumer electronics, and industrial equipment from electrostatic discharge (ESD) and transient voltages induced by load switching and lightning. MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.290g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPK 3000 W PD 6.5 W IFSM 300 A VF 3.5 / 5.0 V Junction temperature TJ -55 to +175 °C Storage temperature TSTG -55 to +175 °C Peak power dissipation at TA = 25°C, tp = 1ms (1) Steady state power dissipation at TA = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (2) Forward Voltage @ IF = 100A for Unidirectional only Notes: 1. Non-repetitive current pulse per Fig.5 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMDJ10AH - SMDJ90AH devices and VF = 5.0V on SMDJ100AH Devices for bipolar applications 1. For bidirectional use CAH suffix for SMDJ10AH – SMDJ64AH 2. Electrical characteristics apply in both directions 1 Version: B2104 SMDJ10AH – SMDJ100AH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 75 °C/W Junction-to-lead thermal resistance RӨJL 15 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Uni Bi SMDJ10AH SMDJ11AH SMDJ12AH SMDJ13AH SMDJ14AH SMDJ15AH SMDJ16AH SMDJ17AH SMDJ18AH SMDJ20AH SMDJ22AH SMDJ24AH SMDJ26AH SMDJ28AH SMDJ30AH SMDJ33AH SMDJ36AH SMDJ40AH SMDJ43AH SMDJ45AH SMDJ48AH SMDJ51AH SMDJ54AH SMDJ58AH SMDJ60AH SMDJ64AH SMDJ70AH SMDJ75AH SMDJ78AH SMDJ85AH SMDJ90AH SMDJ100AH SMDJ10CAH SMDJ11CAH SMDJ12CAH SMDJ13CAH SMDJ14CAH SMDJ15CAH SMDJ16CAH SMDJ17CAH SMDJ18CAH SMDJ20CAH SMDJ22CAH SMDJ24CAH SMDJ26CAH SMDJ28CAH SMDJ30CAH SMDJ33CAH SMDJ36CAH SMDJ40CAH SMDJ43CAH SMDJ45CAH SMDJ48CAH SMDJ51CAH SMDJ54CAH SMDJ58CAH SMDJ60CAH SMDJ64CAH Marking code Breakdown Test voltage current VBR@IT IT (V) (mA) Uni Bi Min Max PDX PDZ PEE PEG PEK PEM PEP PER PET PEV PEX PEZ PFE PFG PFK PFM PFP PFR PFT PFV PFX PFZ PGE PGG PGK PGM PGP PGR PGT PGV PGX PGZ DDX DDZ DEE DEG DEK DEM DEP DER DET DEV DEX DEZ DFE DFG DFK DFM DFP DFR DFT DFV DFX DFZ DGE DGG DGK DGM 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 94.4 100 111 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86.0 92.1 95.8 104 111 123 Working stand-off voltage VWM (V) Maximum Reverse Leakage IR@VWM (µA) 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum Maximum peak impulse clamping current voltage IPPM VC@IPPM (A) (V) 176.5 164.8 150.8 139.5 129.3 123.0 115.4 108.7 102.7 92.6 84.5 77.1 71.3 66.1 62.0 56.3 51.6 46.5 43.2 41.3 38.8 36.4 34.4 32.1 31.0 29.1 26.5 24.8 23.8 21.9 20.5 18.5 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SMDJxH DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 10V(SMDJ10AH) to 100V(SMDJ100AH) “x” defines voltage from 10V(SMDJ10CAH) to 64V(SMDJ64CAH) 2 Version: B2104 SMDJ10AH – SMDJ100AH Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Pulse Derating Curve PEAK PULSE POWER(PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) Fig.1 Peak Pulse Power Rating Curve PPPM, PEAK PULSE POWER, KW 100 Non-repetitive pulse waveform shown in fig.5 10 1 0.1 0.001 0.01 0.1 1 100 75 50 25 0 0 10 25 50 75 100 125 150 175 tp, PULSE WIDTH, (ms) TA, AMBIENT TEMPERATURE (°C) Fig.3 Typical Junction Capacitance Fig.4 Maximum Non-repetitive Forward Surge Current IFSM, PEAK FORWARD SURGE CURRENT (A) 10000 CJ, JUNCTION CAPACITANCE (pF) 125 VR=0 1000 100 VR-rated stand-off voltage f=1.0MHz Vsig=50mVp-p 10 10 100 350 8.3ms single half sine wave Unidirectional only 300 250 200 150 100 50 0 1 V(BR), BREAKDOWN VOLTAGE (V) 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: B2104 SMDJ10AH – SMDJ100AH Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Clamping Power Pulse Waveform 120 IPPM, PEAK PULSE CURRENT (%) 110 Peak value IPPM 100 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 90 Rise time tr=10μs to 100% of IPPM 80 70 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 50 40 30 20 td 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t, TIME (ms) 4 Version: B2104 SMDJ10AH – SMDJ100AH Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 5 Version: B2104 SMDJ10AH – SMDJ100AH Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B2104