SMCJ11CAH

SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor 1500W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified Ideal for automated placement Glass passivated junction Excellent clamping capability Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Fast response time: Typically less than 1.0ps from 0 V to BV min Typical IR less than 1μA above 10V Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 170 V VBR 6.4 - 231 V PPK 1500 W TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die APPLICATIONS ● Immunization of sensitive devices in telecommunications, consumer electronics, and industrial equipment from electrostatic discharge (ESD) and transient voltages induced by load switching and lightning. MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPK 1500 W PD 5 W IFSM 200 A VF 3.5 / 5.0 V Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Peak power dissipation at TA = 25°C, tp = 1ms (1) Steady state power dissipation at T A = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (2) Forward Voltage @ IF = 100A for Unidirectional only Notes: 1. Non-repetitive current pulse per Fig.5 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMCJ5.0H - SMCJ90H devices and VF = 5.0V on SMCJ100H - SMCJ170H devices Devices for bipolar applications 1. For bidirectional use CH or CAH suffix for types SMCJ5.0H - types SMCJ170H 2. Electrical characteristics apply in both directions 1 Version: A2102 SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 55 °C/W Junction-to-case thermal resistance RӨJC 10 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number SMCJ5.0H SMCJ5.0AH SMCJ6.0H SMCJ6.0AH SMCJ6.5H SMCJ6.5AH SMCJ7.0H SMCJ7.0AH SMCJ7.5H SMCJ7.5AH SMCJ8.0H SMCJ8.0AH SMCJ8.5H SMCJ8.5AH SMCJ9.0H SMCJ9.0AH SMCJ10H SMCJ10AH SMCJ11H SMCJ11AH SMCJ12H SMCJ12AH SMCJ13H SMCJ13AH SMCJ14H SMCJ14AH SMCJ15H SMCJ15AH SMCJ16H SMCJ16AH SMCJ17H SMCJ17AH SMCJ18H SMCJ18AH SMCJ20H SMCJ20AH SMCJ22H SMCJ22AH SMCJ24H SMCJ24AH SMCJ26H SMCJ26AH SMCJ28H Marking code GDD GDE GDF GDG GDH GDK GDL GDM GDN GDP GDQ GDR GDS GDT GDU GDV GDW GDX GDY GDZ GED GEE GEF GEG GEH GEK GEL GEM GEN GEP GEQ GER GES GET GEU GEV GEW GEX GEY GEZ GFD GFE GFF Breakdown voltage VBR@IT (V) Min 6.4 6.4 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10 10 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20 20 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 Max 7.3 7 8.15 7.37 8.82 7.98 9.51 8.6 10.30 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38 Test current IT (mA) Working stand-off voltage VWM (V) 10 10 10 10 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5 5 6 6 6.5 6.5 7 7 7.5 7.5 8 8 8.5 8.5 9 9 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 2 Maximum Maximum peak impulse Reverse current Leakage (Note 2) (Note 3) IPPM IR@VWM (µA) (A) 1000 1000 1000 1000 500 500 200 200 100 100 50 50 20 20 10 10 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 164 171 138 152 128 140 118 131 110 122 105 115 99 109 93 102 83 92 78 86 71 79 66 73 61 67 58 64 54 60 51 57 48 53 43 48 39 44 36 40 33 37 31 Maximum clamping voltage (Note 2) VC@IPPM (V) 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 Version: A2102 SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number SMCJ28AH SMCJ30H SMCJ30AH SMCJ33H SMCJ33AH SMCJ36H SMCJ36AH SMCJ40H SMCJ40AH SMCJ43H SMCJ43AH SMCJ45H SMCJ45AH SMCJ48H SMCJ48AH SMCJ51H SMCJ51AH SMCJ54H SMCJ54AH SMCJ58H SMCJ58AH SMCJ60H SMCJ60AH SMCJ64H SMCJ64AH SMCJ70H SMCJ70AH SMCJ75H SMCJ75AH SMCJ78H SMCJ78AH SMCJ85H SMCJ85AH SMCJ90H SMCJ90AH SMCJ100H SMCJ100AH SMCJ110H SMCJ110AH SMCJ120H SMCJ120AH SMCJ130H SMCJ130AH SMCJ150H SMCJ150AH SMCJ160H SMCJ160AH SMCJ170H SMCJ170AH Marking code GFG GFH GFK GFL GFM GFN GFP GFQ GFR GFS GFT GFU GFV GFW GFX GFY GFZ GGD GGE GGF GGG GGH GGK GGL GGM GGN GGP GGQ GGR GGS GGT GGU GGV GGW GGX GGY GGZ GHD GHE GHF GHG GHH GHK GHL GHM GHN GHP GHQ GHR Breakdown voltage VBR@IT (V) Min 31.1 33.3 33.3 36.7 36.7 40 40 44.4 44.4 47.8 47.8 50 50 53.3 53.3 56.7 56.7 60 60 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 Max 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 Test current IT (mA) Working stand-off voltage VWM (V) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 28 30 30 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 Maximum Maximum peak impulse Reverse current Leakage (Note 2) (Note 3) IPPM IR@VWM (µA) (A) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 34 29 32 26 29 24 27 22 24 20 22 19 21 18 20 17 19 16 18 15 16 14 16 13.8 15 12.6 13.9 11.7 13 11.3 12.5 10.4 11.5 9.8 10.7 8.8 9.7 8 8.9 7.3 8.1 6.8 7.5 5.8 6.4 5.4 6 5.1 5.7 Maximum clamping voltage (Note 2) VC@IPPM (V) 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 266 243 287 259 304 275 Notes: 1. VBR measure after IT applied for 30ms, IT = square wave pulse or equivalent 2. Surge current waveform per Fig.5 and derate per Fig.2 3. For bipolar types having VWM of 10V and under, the IR limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 3 Version: A2102 SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SMCJxH DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 5V(SMCJ5.0H) to 170V(SMCJ170H) 4 Version: A2102 SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve PEAK PULSE POWER (PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER (kW) 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.5 10 1 0.1 0.1 1 10 100 1000 125 100 75 50 25 0 0 10000 Fig.3 Typical Junction Capacitance IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) UNIDIRECTIONAL BIDRECTIONA 10000 VR=0 100 VR-rated stand-off voltage 10 1 75 100 125 150 Fig.4 Maximum Non-repetitive Forward Surge Current 100000 f=1.0MHz Vsig=50mVp-p 50 TA, AMBIENT TEMPERATURE (°C) tp, PULSE WIDTH (μs) 1000 25 10 1000 8.3ms single half sine wave Unidirectional only 100 10 1 1 100 10 100 NUMBER OF CYCLES AT 60 Hz V(BR), BREAKDOWN VOLTAGE (V) 5 Version: A2102 SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Clamping Power Pulse Waveform 120 IPPM, PEAK PULSE CURRENT (%) 110 Peak value IPPM 100 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 90 Rise time tr=10μs to 100% of IPPM 80 70 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 50 40 30 20 td 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t, TIME (ms) 6 Version: A2102 SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 7 Version: A2102 SMCJ5.0(A)H – SMCJ170(A)H Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: A2102