SMDJ60A

5.0SMDJ16A – 5.0SMDJ100A Taiwan Semiconductor 5000W, 16V - 100V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS 5000W peak pulse power capability at 10/1000μs waveform Ideal for automated placement Photo glass passivated chip junction Excellent clamping capability Fast response time: Typically less than 1.0ps Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT VWM VBR (uni-directional) PPPSM 16 - 100 V 17.8 - 123 V 5000 W TJ MAX 175 °C Package DO-214AB (SMC) Configuration Stacked die ● I/O interface ● AC/DC power supply MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.300g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000us waveform (2) Steady state power dissipation at T L = 75°C SYMBOL VALUE UNIT PPK 5000 W PD 6.25 W Forward Voltage @ IF = 100A for Uni-directional only VF 5 V Junction temperature TJ -55 to +175 °C Storage temperature TSTG -55 to +175 °C SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 16 °C/W Junction-to-ambient thermal resistance RӨJA 61 °C/W Junction-to-case thermal resistance RӨJC 17 °C/W (3) Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.1 2. Units mounted on PCB (16mm x 16mm Cu pad test board) 3. Pulse test with PW = 0.3ms THERMAL PERFORMANCE PARAMETER Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board) 1 Version: D2102 5.0SMDJ16A – 5.0SMDJ100A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Maximum Breakdown Working Maximum Maximum Maximum blocking Test standpeak Temp. Marking voltage clamping leakage Part number V @I BR T current off impulse coefficient code voltage current (V) IT voltage current of VBR VC@IPP IIB@VWM (Note 1) (mA) VWM IPP αV BR@IT (V) (µA) (V) (A) (mV/°C) Uni Uni Min Max (Note 1) 5.0SMDJ16A 5PET 17.8 19.7 1 16 50 193 26.0 0.096 5.0SMDJ17A 5PEU 18.9 20.9 1 17 20 181 27.6 0.097 5.0SMDJ18A 5PEV 20.0 22.1 1 18 10 172 29.2 0.098 5.0SMDJ20A 5PEW 22.2 24.5 1 20 5 155 32.4 0.099 5.0SMDJ22A 5PEX 24.4 26.9 1 22 5 141 35.5 0.100 5.0SMDJ24A 5PEZ 26.7 29.5 1 24 2 129 38.9 0.101 5.0SMDJ26A 5PFE 28.9 31.9 1 26 2 119 42.1 0.101 5.0SMDJ28A 5PFG 31.1 34.4 1 28 2 110 45.4 0.102 5.0SMDJ30A 5PFK 33.3 36.8 1 30 2 103 48.4 0.103 5.0SMDJ33A 5PFM 36.7 40.6 1 33 2 93.9 53.3 0.104 5.0SMDJ36A 5PFP 40.0 44.2 1 36 2 86.1 58.1 0.104 5.0SMDJ40A 5PFR 44.4 49.1 1 40 2 77.6 64.5 0.105 5.0SMDJ43A 5PFT 47.8 52.8 1 43 2 72.1 69.4 0.105 5.0SMDJ45A 5PFV 50.0 55.3 1 45 2 68.8 72.7 0.106 5.0SMDJ48A 5PFX 53.3 58.9 1 48 2 64.7 77.4 0.106 5.0SMDJ51A 5PFZ 56.7 62.7 1 51 2 60.7 82.4 0.107 5.0SMDJ54A 5PGE 60.0 66.3 1 54 2 57.5 87.1 0.107 5.0SMDJ58A 5PGG 64.4 71.2 1 58 2 53.5 93.6 0.107 5.0SMDJ60A 5PGK 66.7 73.7 1 60 2 51.7 96.8 0.108 5.0SMDJ64A 5PGM 71.1 78.6 1 64 2 48.6 103 0.108 5.0SMDJ70A 5PGP 77.8 86.0 1 70 2 44.3 113 0.108 5.0SMDJ75A 5PGR 83.3 92.1 1 75 2 41.4 121 0.108 5.0SMDJ78A 5PGT 86.7 95.8 1 78 2 39.7 126 0.108 5.0SMDJ85A 5PGV 94.4 104 1 85 2 36.5 137 0.110 5.0SMDJ90A 5PGX 100 111 1 90 2 34.3 146 0.110 5.0SMDJ100A 5PGZ 111 123 1 100 2 30.9 162 0.110 Note: 1. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING 5.0SMDJx DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 16V(5.0SMDJ16A) to 100V(5.0SMDJ100A) 2 Version: D2102 5.0SMDJ16A – 5.0SMDJ100A Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Pulse Power or Current vs. Initial Junction Fig.2 Power Derating Curve 100 6.5 6.0 PD - POWER DISSIPATION (W) PEAK PULSE POWER (PPPM) OR CURRENT (IPP) DERATING IN PERCENTAGE, % Temperature 75 50 25 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 Heat sink 16mm x 16mm Cu pad test board 1.0 0.5 0.0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 LEAD TEMPERATURE (°C) TJ - INITAL TEMPERATURE (°C) Fig.3 Pulse Waveform Fig.4 Typical Junction Capacitance 10000 100 5.0SMDJ16A Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM Peak value IPPM 120 Rise time tr=10μs to 100% CAPACITANCE (pF) IPPM, PEAK PULSE CURRENT (%) 140 80 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 40 20 5.0SMDJ51A 1000 5.0SMDJ100A td 0 100 0 0.5 1 1.5 2 2.5 3 0.1 1 10 100 REVERSE VOLTAGE (V) t, TIME (ms) 3 Version: D2102 5.0SMDJ16A – 5.0SMDJ100A Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM 4 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: D2102 5.0SMDJ16A – 5.0SMDJ100A Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: D2102