ME7232S-G

ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7232S-G is the N-Channel logic enhancement mode power ● RDS(ON)≦5 mΩ@VGS=10V ● RDS(ON)≦7 mΩ@VGS=4.5V field effect transistors, using high cell density, DMOS trench ● Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ● Exceptional on-resistance and maximum DC current minimize on-state resistance. These devices are particularly suited capability for low voltage application such as cellular phone, notebook APPLICATIONS computer power management and other battery powered circuits, ● Power Management in Note book and lower power loss that are needed in a very small outline surface ● Portable Equipment mount package. ● Battery Powered System ● DC/DC Converter PIN CONFIGURATION ● Load Switch DFN(S) 3X3 View ● DSC ● LCD Display inverter * The Ordering Information:ME7232S (Pb free) ME7232S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Parameter TA=25℃ 21.7 TA=70℃ Continuous Drain Current* TC=25℃ 17.4 ID TC=70℃ Pulsed Drain Current 55 IDM TA=25℃ TC=25℃ 206 A 3.79 TA=25℃ Maximum Power Dissipation* A 68.6 2.42 PD W 37.8 Tc=25℃ 24.2 Junction and Storage Temperature Range TJ, Tstg -55 to 150 ℃ Junction-to-Ambient Thermal Resistance* RθJA 33 ℃/W Thermal Resistance-Junction to Case* RθJC 3.3 *The device mounted on 1in2 FR4 board with 2 oz copper *Chip silicon limitation current is 100A Jul, 2020-Ver1.1 D℃/W CC 正式發行 01 ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET Electrical Characteristics (TJ =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistance Typ Max Unit STATIC VsD Diode Forward Voltage a V 2 V VDS=0V, VGS=±20V ±100 nA VDS=30V, VGS=0V 1 μA VGS=10V, ID=8A 3.9 5 VGS=4.5V, ID=5A 5.2 7 IS=1A, VGS=0V 1 mΩ V DYNAMIC Qg Total Gate Charge 33.2 Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 151 td(on) Turn-On Delay Time 16.8 tr Turn-On Rise Time VDS=15V, RL =2.3Ω 50.8 td(off) Turn-Off Delay Time RGEN=3.3Ω, VGS=10V 41.8 tf Turn-Off Fall Time VDS=15V, VGS=10V, ID=6.5A 7.4 nC 7.1 1527 VDS=15V, VGS=0V, f=1.0MHz 187 pF ns 15.7 Single pulse Avalanche Energy Single pulse Avalanche Energy L=0.1mH IAS 29 A Single pulse Avalanche Energy L=0.1mH EAS 42 mJ Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. D CC 正式發行 Jul, 2020-Ver1.1 02 ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Jul, 2020-Ver1.1 03 ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Jul, 2020-Ver1.1 04 ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET DFN(S)3X3 Package Outline D CC 正式發行 Jul, 2020-Ver1.1 05