ME7724-G

ME7724-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7724-G is the N-Channel logic enhancement mode power field ● RDS(ON)≦2.8mΩ@VGS=10V effect transistors are produced using high cell density , DMOS trench ● RDS(ON)≦4.2mΩ@VGS=4.5V technology. This high density process is especially tailored to minimize ● Super high density cell design for extremely low RDS(ON) on-state resistance. These devices are particularly suited for low ● Exceptional on-resistance and maximum DC current voltage application such as cellular phone and notebook computer capability power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline APPLICATIONS surface mount package. ● Portable Equipment PIN CONFIGURATION ● Battery Powered System ● DC/DC Converter PowerDFN 5x6 ● Load Switch Top View Ordering Information: ME7724-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Parameter TC=25℃ 108 TC=70℃ Continuous Drain Current* TA=25℃ TA=70℃ Pulsed Drain Current* IDM 24.9 A 323 A 52 TC=70℃ TA=25℃ A 19.9 TC=25℃ Maximum Power Dissipation* 86 ID 33 PD W 2.8 TA=70℃ 1.8 TJ 150 ℃ Storage Temperature Range Tstg -55 to 150 ℃ Thermal Resistance-Junction to Case* RθJC 2.4 ℃/W Thermal Resistance-Junction to Ambient* RθJA 45 ℃/W Operating Junction Temperature *The device mounted on 1in2 FR4 board with 2 oz copper *Chip silicon limitation current is 100A Mar, 2022-Ver1.2 D CC 正式發行 01 ME7724-G N-Channel 30V (D-S) MOSFET Electrical Characteristics (TA=25℃ Unless Otherwise Specified) Symbol Parameter Limit Min V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.2 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistancea Typ Max Unit STATIC VSD V 3.0 V VDS=0V, VGS=±20V ±100 nA VDS=30V, VGS=0V 1 μA VGS=10V, ID=18A 2.3 2.8 VGS=4.5V, ID=16A 3.1 4.2 mΩ Diode Forward Voltage IS=18A, VGS=0V 1.2 Qg Total Gate Charge VDS=15V,VGS=10V, ID=20A Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 17.1 Ciss Input Capacitance 3040 Coss Output Capacitance Crss Reverse Transfer Capacitance 296 td(on) Turn-On Delay Time 25.4 tr Turn-On Rise Time VDS=15V, RL=15Ω td(off) Turn-Off Delay Time VGS=10V,RG=3Ω tf Turn-Off Fall Time V DYNAMIC 66.9 33 nC VDS=15V,VGS=4.5V, ID=20A VDS=15V, VGS=0V, f=1MHz 13.1 361 pF 24 ns 67.1 23.3 Note: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Force mos reserves the right to improve or change product design, functions, reliability, qualified manufacturer without notice. D CC 正式發行 Mar, 2022-Ver1.2 02 ME7724-G Typical Characteristics (TJ =25℃ Noted) N-Channel 30V (D-S) MOSFET D CC 正式發行 Mar, 2022-Ver1.2 03 ME7724-G Typical Characteristics (TJ =25℃ Noted) N-Channel 30V (D-S) MOSFET D CC 正式發行 Mar, 2022-Ver1.2 04 ME7724-G N-Channel 30V (D-S) MOSFET Power DFN5x6 Package Outline MILLIMETERS (mm) SYMBOL MIN TYP MAX A 0.90 1.1 1.20 b 0.33 0.4 0.51 C 0.155 0.2 0.30 D1 4.80 5 5.20 D2 3.61 3.8 3.96 E 5.8 6 6.20 E1 5.6 5.8 5.90 E2 3.35 3.8 4.31 e 1.27 BSC H 0.35 0.5 0.7 K 1.20 - - L 0.35 0.5 0.71 L1 0.05 0.15 0.30 D CC 正式發行 Mar, 2022-Ver1.2 05