ME70N03S-G

ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The ME70N03S is the N-Channel logic enhancement mode ● RDS(ON)≦6.6mΩ@VGS=10V power field effect transistors are produced using high cell density, ● RDS(ON)≦11mΩ@VGS=4.5V DMOS trench technology. This high density process is especially ● Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are ● Exceptional on-resistance and maximum DC current capability particularly suited for low voltage application such as cellular phone and notebook computer power management and other APPLICATIONS battery powered circuits where high-side switching and low in-line ● Power Management in Note book power loss are needed in a very small outline surface mount package. PIN ● Portable Equipment ● Battery Powered System ● DC/DC Converter CONFIGURATION ● Load Switch ● DSC (TO-252) Top View e Ordering Information:ME70N03S (Pb-free) ME70N03S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Parameter TC=25℃ Continuous Drain Current* TC=70℃ TA=25℃ 62 ID TA=70℃ Pulsed Drain Current TC=25℃ TC=70℃ TA=25℃ Thermal Resistance-Junction to Case 2 *The device mounted on 1in FR4 board with 2 oz copper Feb, 2012– Ver 2.1 A 248 A 41 PD TA=70℃ Operating Junction and Storage Temperature Range 17 13 IDM Maximum Power Dissipation 50 26 3.1 W 2 TJ, Tstg -55 to 150 ℃ RθJC 3 ℃/W DCC 正式發行 01 ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistancea VSD Typ Max Unit STATIC V 3 V VDS=0V, VGS=±20V ±100 nA VDS=30V, VGS=0V 1 μA VGS=10V, ID=30A 5.5 6.6 VGS=4.5V, ID=15A 8.5 11 Diode Forward Voltage IS=20A, VGS=0V 0.85 1.2 Qg Total Gate Charge VDS=15V, VGS=10V, ID=25A Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance td(on) Turn-On Delay Time tr Turn-On Rise Time RL=15Ω, VGEN =10V, ID=1A 15 td(off) Turn-Off Delay Time VDD=15V, RG=3Ω 58 tf Turn-Off Fall Time mΩ V DYNAMIC 38 19.5 VDS=15V, VGS=4.5V, ID=25A nC 8 11 VDS=15V, VGS=0V, F=1MHz VDS=0V, VGS=0V, f=1MHz 1620 pF 255 80 1.1 Ω 17 ns 6 Note: a.Pulse test: pulse width＜=300us, duty cycle＜=2％ b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Feb, 2012– Ver 2.1 02 ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Feb, 2012– Ver 2.1 03 ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Feb, 2012– Ver 2.1 04 ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET TO-252 Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P 2.30 BSC DCC 正式發行 Feb, 2012– Ver 2.1 05