ME2N7002DN-G

ME2N7002DN-G N-Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION FEATURES The ME2N7002DN-G is the N-Channel logic enhancement mode ● RDS(ON) ≦2.8Ω@VGS=10V power field effect transistors are produced using high cell density, ● RDS(ON) ≦3.7Ω@VGS=4.5V DMOS trench technology. This high density process is especially ● RDS(ON) ≦4.4Ω@VGS=3V tailored to minimize on-state resistance. These devices are ● ESD Protection HBM≧2KV particularly suited for low voltage application such as cellular phone ● Super high density cell design for extremely low RDS(ON) and notebook computer power management and other battery ● Exceptional on-resistance and maximum DC current powered circuits , and low in-line power loss are needed in a very small outline surface mount package. capability ● Capable doing Cu wire bonding ● MSL1 PIN CONFIGURATION APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC  N-Channel MOSFET Th Ordering Information: ME2N7002DN-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA=25℃ ID 0.28 TA=70℃ ID 0.23 IDM 1.12 TA=25℃ PD 0.36 TA=70℃ PD 0.23 TJ -55 to 150 RθJA 350 Parameter Continuous Drain A Pulsed Drain Current Maximum Power Dissipation W Operating Junction Temperature Thermal Resistance-Junction to Ambient* 2 * The device mounted on 1in FR4 board with 2 oz copper May, 2021-Ver2.1 A ℃ D CC ℃/W 正式發行 01 ME2N7002DN-G N-Channel 60V (D-S) MOSFET, ESD Protection Protected Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max Unit STATIC V 2.5 V VDS=0V, VGS=±20V ±10 μA VDS=60V, VGS=0V 1 μA VGS=10V, ID=500mA 1.75 2.8 VGS=4.5V, ID=200mA 2.2 3.7 VGS=3V, ID=10mA 3.5 4.4 Diode Forward Voltage * IS=200mA, VGS=0V 0.82 1.3 Qg Total Gate Charge VDS=30V, VGS=10V,ID=200mA 3.68 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 0.28 Ciss Input Capacitance 16 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time RDS(ON) VSD Drain-Source On-Resistance* Ω V DYNAMIC 1.43 nC VDS=30V,VGS=4.5V,ID=200mA VDS=25V, VGS=0V, f=1MHz 2.1 2 pF 1 VDS=30V, RL =150Ω VGS=10V,RG=10Ω ID=200mA 3.6 23.2 ns 5.5 23.2 Notes: a, pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Force mos reserves the right to improve or change product design, functions, reliability, qualified manufacturer without notice. D CC 正式發行 May, 2021-Ver2.1 02 ME2N7002DN-G N-Channel 60V (D-S) MOSFET, ESD Protection Protected Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 May, 2021-Ver2.1 03 ME2N7002DN-G N-Channel 60V (D-S) MOSFET, ESD Protection Protected Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 May, 2021-Ver2.1 04 ME2N7002DN-G N-Channel 60V (D-S) MOSFET, ESD Protection Protected DFN1006-3L Package Outline TO-252-3L Package Outline Suggested Pad Layout Dimensions C X X1 X2 Y Y1 (mm) 0.65 1.05 0.4 0.4 0.2 0.55 D CC 正式發行 May, 2021-Ver2.1 05 ME2N7002DN-G N-Channel 60V (D-S) MOSFET, ESD Protection Protected Device name: ME2N7002DN-G Package: DFN1006-3L Marking Code X:Data Code D CC 正式發行 May, 2021-Ver2.1 06 ME2N7002DN-G N-Channel 60V (D-S) MOSFET, ESD Protection Protected Tape and reel specifications PACKAGE W E F P0 D P2 P1 T A0 B0 K0 8mm 1.75mm 3.5mm 4mm 1.5mm 2mm 2mm 0.23mm 0.67mm 1.2mm 0.55mm ±0.1 ±0.1 ±0.05 ±0.1 ±0.1 ±0.1 ±0.1 ±0.02 ±0.05 ±0.05 ±0.05 DFN1006-3L D CC 正式發行 May, 2021-Ver2.1 07