ME13N10A-G

* ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME13N10A is the N-Channel logic enhancement mode power ● RDS(ON) ≦145mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to ● Exceptional on-resistance and maximum DC current minimize on-state resistance. These devices are particularly suited capability for low voltage application such as cellular phone and notebook APPLICATIONS computer power management and other battery powered circuits ● DC/DC Converter where high-side switching, and low in-line power loss are needed in a ● Load Switch ● LCD/ LED Display inverter very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View The Ordering Information: ME13N10A (Pb-free) ME13N10A-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Parameter TC=25℃ Continuous Drain Current TC=70℃ Pulsed Drain Current 11.3 ID IDM TC=25℃ Maximum Power Dissipation TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Case* A 9.0 45.4 A 29.9 PD W 19.1 TJ, Tstg -55 to 150 ℃ RθJC 4.17 ℃/W 2 *The device mounted on 1in FR4 board with 2 oz copper D CC 正式發行 Aug, 2020-Ver1.1 01 ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max Unit STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistance VSD Diode Forward Voltage a V 3 V VDS=0V, VGS=±20V ±100 nA VDS=100V, VGS=0V 1 μA 145 mΩ 1.2 V VGS=10V, ID= 5A 115 IS=9A, VGS=0V DYNAMIC Qg Total Gate Charge 16.4 Qgs Gate-Source Charge Qgd Gate-Drain Charge 3.5 Ciss Input capacitance 524 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDS=30V, VGS=10V, ID=3A VDS=25V, VGS=0V, f=1MHz 3.8 nC 55 pF 32 11.7 VDD=30V, RL =15Ω VGS=10V, RGEN=2.5Ω 10.9 ns 27.3 2.6 Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. D CC 正式發行 Aug, 2020-Ver1.1 02 ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Aug, 2020-Ver1.1 03 ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Aug, 2020-Ver1.1 04 ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET TO252-3L Package Outline TO-252 Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P Aug, 2020-Ver1.1 2.30 BSC D CC 正式發行 05