80N03DF

80N03DF PDFN3X3 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features 30V,80A, RDS(ON) =4.0mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Applications MB / VGA / Vcore POL Applications SMPS 2nd SR BVDSS RDSON ID 30V 4.0mΩ 80A Dimensions in millimeters Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V 80 A Drain Current – Continuous (TC=25℃) ID Drain Current – Continuous (TC=100℃) IDM PD 38 A Drain Current – Pulsed1 240 A Power Dissipation (TC=25℃) 45 W 0.36 W/℃ Power Dissipation – Derate above 25℃ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 ℃ ℃ Thermal Characteristics Symbol Parameter Typ. Max. RθJA Thermal Resistance Junction to ambient --- 62 RθJC Thermal Resistance Junction to Case --- 2.8 Unit ℃/W ℃/W REV 1.0 2020 JAN PAGE:1/4 80N03DF Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Static State Characteristics Symbol BVDSS △ Conditions BVDSS/△TJ BVDSS Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current RDS(ON) Static Drain-Source On-Resistance3 VGS(th) Gate Threshold Voltage △ Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ --- --- 1 uA --- --- 10 uA VGS=±20V , VDS=0V --- --- ±100 nA VGS=10V , ID=20A --- 4.0 6 mΩ VGS=4.5V , ID=10A --- 6.5 8 mΩ 1.0 1.6 2.5 V --- -4 --- mV/℃ --- 23 --- S --- 11.1 --- Parameter Drain-Source Breakdown Voltage VGS(th) VGS(th) Temperature Coefficient gfs Forward Transconductance VDS=30V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=125℃ VGS=VDS , ID =250uA VDS=10V , ID=10A Dynamic Characteristics Qg Total Gate Charge3 , 4 VDS=15V , VGS=4.5V , ID=20A nC Qgs Gate-Source --- 1.85 --- Qgd Gate-Drain Charge3 , 4 --- 6.8 --- Turn-On Delay Time3 , 4 --- 7.5 --- VDD=15V , VGS=10V , RG=3.3Ω --- 14.5 --- ID=15A --- 35.2 --- --- 9.6 --- --- 1210 --- --- 190 --- --- 100 --- --- 2.5 --- Ω Min. Typ. Max. Unit --- --- 80 A --- --- 160 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Td(on) Tr Td(off) Tf Ciss Charge3 , 4 Rise Time 3,4 Turn-Off Delay Time3 , 4 Fall Time3 , 4 Input Capacitance VDS=25V , VGS=0V , F=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, F=1MHz ns pF Drain-Source Diode Characteristics Symbol IS ISM VSD Parameter Conditions Continuous Source Current Pulsed Source Current3 Diode Forward Voltage3 VG=VD=0V , Force Current trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs --- 15 --- ns Qrr Reverse Recovery Charge TJ=25℃ --- 5 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=42A.,RG=25Ω Starting TJ=25 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. , ℃. REV 1.0 2020 JAN PAGE:2/4 Normalized On Resistance (mΩ) ID , Continuous Drain Current (A) RATING AND CHARACTERISTIC CURVES (80N03DF) TC , Case Temperature ( Continuous Drain Current vs. TC TJ , Junction Temperature ( Normalized Vth vs. TJ ℃) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge ( Fig.4 nC) Gate Charge Waveform VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Fig.5 ℃) ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Fig.3 TJ , Junction Temperature ( VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 ℃) Normalized Transient Impedance Fig.6 Maximum Safe Operation Area REV 1.0 2020 JAN PAGE:3/4 RATING AND CHARACTERISTIC CURVES (80N03DF) Fig.7 Switching Time Waveform REV 1.0 2020 JAN PAGE:4/4