BC846B

EVBC846-EVBC848 BC846-BC848 BC846-BC848 "S1" means SOT-23 EVBC846-EVBC848 NPN Transistors 3 2 ■ Features 1 ● Ideally suited for automatic insertion 1.Base 2.Emitter 3.Collector ■ Simplified outline(SOT-23) ● For switching and AF amplifier applications ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol EVBC846 EVBC847 EVBC848 Collector - Base Voltage VCBO 80 50 30 Collector - Emitter Voltage VCEO 65 45 30 Emitter - Base Voltage VEBO 6 6 6 Unit V Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range ℃ 1 1 EVBC846-EVBC848 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector- base breakdown voltage EVBC846 EVBC847 Test Conditions Min VCBO Ic= 100 μA， IE= 0 30 Collector-base cut-off current VCEO Ic= 1 mA， IB= 0 45 30 VEBO VCB= 70 V , IE= 0 ICBO VCB= 50 V , IE= 0 ICEO 1 uA nA VCE= 45 V , IE= 0 VCE= 30 V , IE= 0 EVBC848 Emitter cut-off current nA VCE= 60 V , IE= 0 EVBC846 EVBC847 100 VCB= 30 V , IE= 0 EVBC848 Collector- emitter cut-off current 6 IE= 100μA， IC= 0 EVBC846 EVBC847 V 65 EVBC848 Emitter - base breakdown voltage IEBO VEB= 5V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=5mA 0.4 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=5mA 1.1 DC current gain EVBC846A,847A,848A EVBC846B,847B,848B VCE= 5V, IC= 2mA hFE EVBC846C,847C,848C Collector output capacitance 110 220 200 450 420 800 VCB= 10V,f= 1 MHz Cob Transition frequency Unit 50 EVBC846 EVBC847 Max 80 EVBC848 Collector- emitter breakdown voltage Typ fT 4.5 VCE= 5V, IC= 10mA,f=100MHz 100 V pF MHz ■ Classification of hfe Type EVBC846A-S1 EVBC846B-S1 EVBC846C-S1 EVBC847A-S1 EVBC847B-S1 EVBC847C-S1 EVBC848A-S1 EVBC848B-S1 EVBC848C-S1 Range 110-220 220-450 420-800 110-220 220-450 420-800 110-220 220-450 420-800 Marking 1A 1B 1C 1E 1F 1G 1J 1K 1L 2 2 EVBC846-EVBC848 ■ Typical Characterisitics Static Characteristic 10 (mA) 8 1000 DC CURRENT GAIN IC 16uA 6 14uA 12uA 4 —— IC COMMON EMITTER VCE= 5V Ta=100℃ hFE 20uA 18uA COLLECTOR CURRENT hFE 3000 COMMON EMITTER Ta=25℃ 10uA 8uA Ta=25℃ 100 6uA 2 4uA 0 IB=2uA 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC 500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 800 Ta=25℃ 600 Ta=100 ℃ 400 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=25℃ 1 10 COLLECTOR CURREMT VBE IC Ta=100 ℃ (mA) fT 500 —— IC 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V 100 (mA) 100 10 0.1 100 —— IC β=20 β=20 200 0.1 10 COLLECTOR CURRENT VCE (V) 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 BASE-EMMITER VOLTAGE VBE (V) 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IE=0/IC=0 CAPACITANCE C (pF) Cib Cob 1 0.1 0.1 10 V 30 —— (mA) 10 12 125 150 Ta 150 100 50 0 25 50 75 AMBIENT TEMPERATURE (V) 8 IC 200 0 1 REVERSE VOLTAGE 6 PC 250 Ta=25 ℃ 10 4 COLLECTOR CURRENT 100 Ta (℃) 3 3 EVBC846-EVBC848 ■ SOT-23 D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 4 4 EVBC846-EVBC848 5