WSF70N10D

WSF70N10D N-Ch MOSFET General Description Product Summery The WSF70N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, BVDSS RDSON ID 100V 9mΩ 60A fast switchingand excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in. Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Features Synchronous-rectification applications Low RDS(on) & FOM Extremely low switching loss TO-252 Pin Configuration Excellent stability and uniformity or Invertors Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Symbol Value Unit VDS Drain source voltage 100 V VGS Gate source voltage ±20 V Continuous drain current1） TC=25 ℃ 60 A Pulsed drain current2) TC=25 ℃ 180 A PD Power dissipation3) TC=25 ℃ 56.8 W EAS Single pulsed avalanche energy 4) 183.8 mJ -55 to 150 ℃ ID ID, pulse Tstg，Tj Operation and storage temperature Rth(J-c) Thermal resistance, junction-case 2.5 °C/W Rth(J-A) Thermal resistance, junction-ambient 4) 70 °C/W www.winsok.tw Page 1 Rev1.0 Jan.2021 WSF70N10D N-Ch MOSFET Electrical Characteristics at Tj=25 ℃ unless otherwise specified Symbol Parameter Test condition Min. Typ. Max. Unit BVDSS Drain-source breakdown voltage VGS=0 V, ID=250 μA 100 - - V VGS(th) Gate threshold voltage VDS=VGS, ID=250 μA 1.5 - 2.5 V RDS(ON) Drain-source on-state resistance VGS=10 V, ID=20 A - 9 10.0 mΩ RDS(ON) Drain-source on-state resistance VGS=4.5 V, ID=12 A - 12 14.0 mΩ VGS=20 V - - 100 VGS=-20 V - - -100 IGSS Gate-source leakage current nA IDSS Drain-source leakage current VDS=100 V, VGS=0 V - - 1 uA RG Gate resistance f= 1 MHz, Open drain - 5.5 - Ω Ciss Input capacitance - 1999 - pF Coss Output capacitance - 322 - pF Crss Reverse transfer capacitance - 7.1 - pF td(on) Turn-on delay time - 22.1 - ns VGS=0 V, VDS=50 V, ƒ=100 kHz VGS=10 V, Rise time VDS=50 V, - 5.2 - ns Turn-off delay time RG=2 Ω, - 44 - ns Fall time - 8.4 - ns Qg Total gate charge - 28.9 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge - 6.8 - nC - 3.7 - V tr td(off) tf ID=25 A ID=25 A, VDS=50 V, VGS=10 V VGS