MDD2306

SI2306 SOT-23 Plastic-Encapsulate MOSFETS 30V N-Channel MOSFET V(BR)DSS 30V SOT-23 RDS(on)Typ ID Max 28mΩ@10V 5.0A 38mΩ@4.5V 3 1. GATE 2. SOURCE 1 3. DRAIN 2 APPLICATION Load Switch for Portable Devices z DC/DC Converter z FEATURE z Trench FET Power MOSFET MARKING Equivalent circuit D A6sHB G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 178 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TA = 25 oC Continuous Drain Current T = 70oC Maximum Power Dissipation 1) ,2) TA = 25 C T = 70oC 6WRUDJH7HPSHUDWXUH5DQJH Thermal Resistance from Junction-to-Ambient (t≤5s) A 20.4 1.5 PD W 0.9 A 0D[LPXP Junction 7HPSHUDWXUH A 4 IDM o V 5.0 ID A Pulsed Drain Current 1) Unit TJ 150 o Tstg -50 to 150 o 80 RθJA C C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T200218A0 http://www.microdiode.com Rev:2020A0 Page :1 SI2306 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID=250µA Gate-body leakage IGSS VGS=±20V, VDS=0V ±100 nA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA VDS =24V, VGS =0V 100 µA Gate-threshold voltage (note 1) VGS(th) 1.6 2.5 V Ddrain-source on-resistance (note 1) RDS(on) VGS =10V, ID =4A 28 36 VGS =4.5V, ID =3A 38 50 V 30 1.0 VDS =VGS, ID =250μA 7 gFS VDS =4.5V, ID =2.5A Gate Resistance Rg f=1MHz Total Gate C harge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.3 Input capacitance Ciss 240 Output capacitance Coss Reverse transfer capacitance Crss 30 td(on) 4.4 Forward transconductance (note 1) mΩ S Dynamic characteristics 2.5 5 7.5 Ω 6 VDS =15V,ID=4A,VGS =10V nC 0.5 VDS =15V,VGS =0V, f=1MHz pF 35 Switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time tr td(off) VDD=15V, VGS=10V, 2.6 ID =1A,RG=3.3Ω 25.5 tf ns 3.3 Drain-source body diode characteristics Source drain current(Body Diode) ISD Body diode forward voltage (note 1) VSD 0.85 ISD=4A, VGS = 0V 1.8 A 1.2 V Notes : Pulse Test : Pulse Width≤ 300µs, Duty Cycle≤ 2 %. 1. http://www.microdiode.com Rev:2020A0 Page :2 SI2306 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig2. Normalized Threshold Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) VGS, Gate -Source Voltage (V) ID , Drain Current (A) Fig4. On-Resistance vs. Drain Current and Gate -ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2019A0 Page :3 SI2306 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms http://www.microdiode.com Rev:2020A0 Page :4 SI2306 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2020A0 Page :5