MDD2300

SI2300 SOT-23 Plastic-Encapsulate MOSFETS 20V N-Channel Advanced Power MOSFET V(BR)DSS 3 19.4mΩ @ 4.5V 20V SOT-23 ID RDS(on)MAX 6.2A 21.5mΩ @ 3.3V  1. GATE 2. SOURCE 3. DRAIN FEATURE z z 1 2 APPLICATION Low RDS(on) @VGS=4.5V z 3.3V Logic Level Control z Load Switch DC/DC Converter Switching Circuits Power Management z z Equivalent circuit MARKING D 2300 G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 178 3000 203×203×195 45000 438×438×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Limit Drain-Source Voltage V(BR)DSS Gate-Source Voltage VGS TA=25℃ Continuous Drain Current Maximum Power Dissipation TA=70℃ TA=25℃ 2) TA=70℃ 20 V ±10 6.2 ID A 4.3 1.56 PD W 0.9 IDM Pulsed Drain Current 1) Unit 24.8 A Maximum Junction Temperature TJ 150 o Storage Temperature Range Tstg -50 to 150 o Thermal Resistance Junction-Ambient RθJA 80 C C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. DN:T200108A0 http://www.microdiode.com The above data are for reference only. Rev:2020A0 Page :1 SI2300 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID=250µA Gate-body leakage IGSS VGS=±10V, VDS=0V Zero gate voltage drain current IDSS 20 V ±100 nA VDS =16V, VGS =0V 1 µA VDS =16V, VGS =0V 100 µA 0.6 1.0 V VGS =4.5V, ID =4A 19.4 25 VGS =3.3V, ID =3A 21.5 28 On characteristics Gate-threshold voltage (note 1) VGS(th) Static drain-source on-resistance (note 1) RDS(on) 0.45 VDS =VGS, ID =250μA gFS VDS =10V, ID =0.25A Gate Resistance Rg f=1MHz Total Gate C harge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 Input capacitance Ciss 457 Output capacitance Coss Reverse transfer capacitance Crss 66 td(on) 4.1 Forward transconductance (note 1) 100 mΩ mS Dynamic characteristics (note 2) Ω 7.8 6.6 VDS =10V,ID=4A,VGS =4.5V nC 0.4 VDS =10V,VGS =0V, f=1MHz pF 71 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) Fall time (note 1,2) VDD=10V, VGS=4.5V, tr 11.6 ID =1A,RG=3.3Ω td(off) ns 24 tf 7.6 Drain-source body diode characteristics Source drain current(Body Diode) ISD Body diode forward voltage (note 1) VSD 0.79 ISD=4A, VGS = 0V 0.2 A 1.2 V Notes : 1. Pulse Test : Pulse Width≤ 300µs, Duty Cycle≤ 2%. 2. These parameters have no way to verify. http://www.microdiode.com Rev:2020A0 Page :2 SI2300 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. VGS(TH) Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Fig3. Typical Transfer Characteristics Fig4. On-Resistance vs. Drain Current and Gate -ID - Drain Current (A) ID , Drain Current (A) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area The curve above is for reference only. http://www.microdiode.com Rev:2019A0 Page :3 SI2300 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :4 SI2300 Outlitne Drawing SOT-23 Package Outline Dimensions L L1 E E1 θ 1 e Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2020A0 Page :5