SF506ED

SF506ED

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    -

  • 描述:

  • 数据手册
  • 价格&库存
SF506ED 数据手册
SF501ET(D) THRU SF506ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 5.0 Ampere SUPER FAST GLASS PASSIVATED RECTIFIERS TO-252(D-PAK) TO-251(I-PAK) FEATURES High current capability Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed Mounting position: any MECHANICAL DATA Case: TO-251/252 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0141 ounce(approx), 0.4 grams (approx) PACKAGE SPECIFICATIONS Package Reel Size Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) TO-251 13' 330 2500 340×336×29 2500 353×346×365 25000 TO-252 13' 330 2500 340×336×29 2500 353×346×365 25000 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. TO-251 MCHARACTERISTICS TO-252 SF 501ET SF 501ED SF 502ET SF 502ED SF 504ET SF 504ED SF 505ET SF 505ED SF 506ET SF 506ED UNITS 100 70 100 SF 503ET SF 503ED 200 140 200 300 210 300 400 280 400 500 350 500 600 420 600 V V V Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM VRMS VDC Maximum average forward rectified current I(AV) 5.0 A IFSM 150 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A DC Maximum DC reverse current at rated DC blocking voltage TA=25℃ TA=125℃ Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Maximum Reverse Recovery Time(Note3) Operating junction and storage temperature range VF IR CJ RθJA Trr TJ,TSTG 0.95 1.25 1.0 300 45 15 35 -55 to +150 1.70 V uA pF ℃/W ns ℃ Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 2.Mounted on 10cm x 10cm x 1mm copper pad area 3. Reverse Recovery Test Conditions:IF=0.5A,IR=1A,Irr=0.25A 4. The typical data above is for reference only. DN:T18B02A0 https://www.microdiode.com Rev:2018A0 Page :1 SF501ET(D) THRU SF506ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 5.0 Ampere Rating and Characteristic Curves FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 160 5 4 3 2 1 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 125 100 150 175 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT, (A) FIG.1 - FORWARD CURRENT DERATING CURVE 8.3ms Single Half Since-Wave JEDEC Method 140 120 100 80 60 40 20 5 o CASE TEMPERATURE, C 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100V~200V 300V~400V 1.0 500V~600V 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 O 10 O TJ= 25 C 1.0 1.8 0.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ= 125 C 100 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 80 70 60 50 40 30 0 1 2 5 10 20 50 100 200 500 REVERSE VOLTAGE, VOLTS The curve above is for reference only. https://www.microdiode.com Rev:2018A0 Page :2 SF501ET(D) THRU SF506ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 5.0 Ampere Outlitne Drawing TO-252(D-PAK) Package Outline Dimensions https://www.microdiode.com Rev:2018A0 Page :3 SF501ET(D) THRU SF506ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 5.0 Ampere Outlitne Drawing TO-251(I-PAK) Package Outline Dimensions https://www.microdiode.com Rev:2018A0 Page :4
SF506ED 价格&库存

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