SF1004ED

SF1004ED

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    -

  • 描述:

  • 数据手册
  • 价格&库存
SF1004ED 数据手册
SF1001ET(D) THRU SF1006ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 10.0 Ampere SUPER FAST GLASS PASSIVATED RECTIFIERS TO-252(D-PAK) TO-251(I-PAK) FEATURES High current capability Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed Mounting position: any MECHANICAL DATA Case: TO-251/252 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0141 ounce(approx), 0.4 grams (approx) PACKAGE SPECIFICATIONS Package Reel Size Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) TO-251 13' 330 2500 340×336×29 2500 353×346×365 25000 TO-252 13' 330 2500 340×336×29 2500 353×346×365 25000 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. TO-251 MCHARACTERISTICS TO-252 SF SF 1001ET 1002ET SF SF 1001ED 1002ED 100 70 100 200 140 200 SF 1003ET SF 1003ED SF SF 1004ET 1005ET SF SF 1004ED 1005ED 300 210 300 400 280 400 500 350 500 SF 1006ET SF 1006ED UNITS 600 420 600 V V V Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM VRMS VDC Maximum average forward rectified current I(AV) 10.0 A IFSM 170 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 10.0A DC Maximum DC reverse current at rated DC blocking voltage TA=25℃ TA=125℃ Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Maximum Reverse Recovery Time(Note3) Operating junction and storage temperature range VF IR CJ RθJA Trr TJ,TSTG 0.95 1.30 1.0 300 45 15 35 -55 to +150 1.70 V uA pF ℃/W ns ℃ Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 2.Mounted on 10cm x 10cm x 1mm copper pad area 3. Reverse Recovery Test Conditions:IF=0.5A,IR=1A,Irr=0.25A 4. The typical data above is for reference only. DN:T21310A1 https://www.microdiode.com Rev:2021A1 Page :1 SF1001ET(D) THRU SF1006ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 10.0 Ampere Rating and Characteristic Curves Fig.2 Typical Reverse Characteristics Fig.1 Maximum Average Forward Current Rating 300 10.0 100 IR- Reverse Current (uA) ( Average Forward Current (A) TJ=125°C 8.0 6.0 4.0 2.0 RESISTIVE OR INDUCTIVE LOAD 10 TJ=75°C 1.0 TJ=25°C 0.1 0.0 25 50 75 100 125 150 Case Temperature (°C) 40 20 0 175 80 60 100 Percent of rated peak reverse voltage % Fig.4 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 100 TJ=25°C TJ=25°C Junction Capacitance (pF) 100 Instaneous Forward Current (A) 10 100~200V 300~400V 1.0 500~600V 0.1 10 TJ=25°C f = 1.0MHz Vsig = 50mVp-p 1 0.01 0 0.5 1.5 1.0 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 210 Peak Forward Surage Current (A) 180 150 120 90 60 30 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. https://www.microdiode.com Rev:2021A1 Page :2 SF1001ET(D) THRU SF1006ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 10.0 Ampere Outlitne Drawing TO-252(D-PAK) Package Outline Dimensions https://www.microdiode.com Rev:2021A1 Page :3 SF1001ET(D) THRU SF1006ET(D) Reverse Voltage -100 to 600 Volts Forward Current - 10.0 Ampere Outlitne Drawing TO-251(I-PAK) Package Outline Dimensions https://www.microdiode.com Rev:2021A1 Page :4
SF1004ED 价格&库存

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