BSS123

BSS123 SOT-23 Plastic-Encapsulate MOSFETS 100V N-Channel MOSFET V(BR)DSS 3.5Ω @ 10V 100V SOT-23 ID RDS(on)MAX 3 200mA 4Ω@ 4.5V  1. GATE 2. SOURCE 3. DRAIN FEATURE 1 2 APPLICATION z Surface Mount Package z Small Servo Motor Controls z High Density Cell Design for Extremely Low RDS(ON) z Power MOSFET Gate Driversigh z Voltage Controlled Small Signal Switch z Switching Application z Rugged and Reliable Equivalent circuit MARKING D SAS G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 203×203×195 45000 438×438×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (note 1) ID 0.2 A Pulsed Drain Current (tp=10us) IDM 0.8 A Continous Source-Drain Diode Current IS 0.17 A Power Dissipation PD 0.3 W RθJA 400 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ Parameter N-MOSFET Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) DN:T19B13A0 http://www.microdiode.com The above data are for reference only. Rev:2019A0 Page :1 BSS123 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS V 1 µA VDS =80V,VGS = 0V Ta=125℃ 100 uA IGSS VGS =±20V, VDS = 0V ±10 uA VGS(th) VDS =VGS, ID =250µA IDSS Gate-body leakage current Drain-source on-resistance(note 2) 100 VDS =100V,VGS = 0V Ta=25℃ Zero gate voltage drain current Gate threshold voltage (note 2) VGS = 0V, ID =250µA RDS(on) 1 VGS =10V, ID =0.2A VGS =4.5V, ID =0.1A Forward tranconductance(note 2) gFS VDS =10V, ID =170mA Diode forward voltage VSD ISD=200mA, VGS = 0V 2.0 3.0 V 3.5 6 Ω 4 8 80 Ω mS 0.85 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 31.6 2.8 pF pF 2 pF td(on) 2 ns tr 3.1 ns ns VDS =50V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time Turn-on rise time Turn-off delay time td(off) VGS=10V,VDD=50V, ID=0.2A,RGEN=3.3Ω tf 6.5 15 Total Gate Charge Qg 0.74 nC Gate-Source Charge Qgs 0.08 nC Gate-Drain Charge Qgd 0.26 nC Turn-off fall time VDS=50V,ID=0.2A, VGS=10V ns Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2.. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3.. witching characteristics are independent of operating junction temperature. 4.. Graranted by design，not subject to producting. http://www.microdiode.com Rev:2019A0 Page :2 BSS123 ID, Drain-Source Current (mA) VGS(TH), Gate -Source Voltage (V) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature VDS, Drain -Source Voltage (mV) Tj - Junction Temperature (°C) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) VGS, Gate -Source Voltage (V) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2019A0 Page :3 BSS123 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. http://www.microdiode.com Rev:2019A0 Page :4 BSS123 Outlitne Drawing SOT-23 Package Outline Dimensions L L1 E E1 θ 1 e Symbol A A1 b c D E E1 E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.35 0.50 0.10 0.20 2.70 2.90 3.10 1.40 1.60 2.4 2.80 1.90 0.30 0.10 0.4 0° 10° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2019A0 Page :5