S9013-E

S9013-E SOT-23 Plastic-Encapsulate Transistors S9013-E TRANSISTOR (NPN) SOT-23 FEATURES High Collector Current z Complementary To S9012 z Excellent hFE Linearity z 1. BASE 2. EMITTER MARKING: J3 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation 0.3 W Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol ol Test conditions Typ Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE(1) VCE=1V, IC=50mA 400 120 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.8 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.4 V VCB=1V, IC=10mA 0.7 V Base-emitter voltage VBE Transition frequency fT VCE=6V, IC=20mA f=30MHz Collector output capacitance Cob VCB=6V, IE=0 f=1MHz 150 MHz 8 pF CLASSIFICATION OF hFE (1) Rank L H J Range 120-200 200-350 300-400 http://www.microdiode.com Rev:2024A1 Page :1 S9013-E Typical Characteristics Static Characteristic 100 hFE Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT 60 IC Ta=100℃ 300uA IC (mA) 350uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 400uA 80 hFE 1000 250uA 200uA 40 150uA 100 100uA 20 IB=50uA 0 10 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 1 20 3 10 IC VBEsat 1.2 500 100 30 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 0.0 1 3 30 10 100 COLLECTOR CURRENT IC 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE IC 100 500 Cob/ Cib 100 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib 30 (pF) Ta=100℃ CAPACITANCE C (mA) 10 COLLECTOR CURRENT IC COMMON EMITTER VCE=1V 30 500 (mA) 3 Ta=25℃ 1 Cob 10 3 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1 0.1 1.0 fT —— IC PC —— 400 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) 1000 1 0.3 V 20 (V) Ta VCE=6V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ 300 100 10 300 200 100 0 10 100 30 COLLECTOR CURRENT http://www.microdiode.com IC (mA) 0 25 50 75 AMBIENT TEMPERATURE Rev:2024A1 100 Ta 125 150 (℃ ) Page :2 S9013-E Outlitne Drawing SOT-23 Package Outline Dimensions 1 e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2024A1 Page :3 S9013-E SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 203×203×195 180,000 pcs 438×438×220 Rev:2024A1 Page :4 S9013-E Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights or Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2024A1 Page :5