SI2301S-2.3A

SI2301S SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET V(BR)DSS 125mΩ@4.5V -20V 3 ID Max RDS(on)Typ -2.3A 140mΩ@3.3V 1. GATE 2. SOURCE 1 3. DRAIN Features APPLICATION Trench FET Power MOSFET z z z MARKING 2 High-side Load Switch Switching Circuits High Speed line Driver Equivalent circuit D A1sHB G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 178 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±10 TA = 25 oC T = 70oC Continuous Drain Current Maximum Power Dissipation TA = 25 C T = 70oC 2) Junction-to-Ambient Thermal Resistance (PCB mounted) 2) A -9 1.0 PD W 0.8 A Operating Junction and Storage Temperature Range A -1.8 IDM o V -2.3 ID A Pulsed Drain Current 1) Unit TJ, Tstg -50 to 150 RthJA 125 o C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T22816A1 http://www.microdiode.com Rev:2022A1 Page :1 SI2301S MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.6 -1 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 Gate-source leakage IGSS VDS =0V, VGS =±10V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance Forward transconductance a a RDS(on) gfs VGS =-4.5V, ID =-2A 125 140 VGS =-3.3V, ID =-1A 140 170 VDS =-5V, ID =-2.8A 4.0 V mΩ S b Dynamic 177 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 25 Total gate charge Qg 5.3 Gate-source charge Qgs Gate-drain charge Qgd 1.4 Turn-on delay time td(on) 11 Rise time Turn-off delay time Fall time tr td(off) 30 VDS =-10V,VGS =0V,f =1MHz VDS =-10V,VGS =-4.5V,ID =-2A pF 0.7 VDD=-10V ID =-2A, nC 32 VGEN=-4.5V,Rg=3.3Ω ns 25 38 tf Drain-source body diode characteristics Continuous source-drain diode current Body diode voltage a) b) IS VSD TC=25℃ -0.83 Tj=25℃, ISD=-1A, VGS=0V -1.2 A -1.2 V Pulse test: pulse width ≤ 300us, duty cycle≤ 2% Guaranteed by design, not subject to production testing http://www.microdiode.com Rev:2022A1 Page :2 SI2301S -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature -VDS, Drain -Source Voltage (mV) Tj - Junction Temperature (°C) -ID, Drain-Source Current (A) -VDS, Drain -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) -VGS, Gate -Source Voltage (V) -ISD, Reverse Drain Current (A) -VGS, Gate -Source Voltage (V) -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com -VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2022A1 Page :3 SI2301S C, Capacitance (pF) -VGS, Gate-Source Voltage (V) Typical Characteristics -VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms http://www.microdiode.com Rev:2022A1 Page :4 SI2301S Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2022A1 Page :5