MDDG1C120R040K3

MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET V Features VDS ID(Tc=25℃) 55A • • • • • RDS(on) 40mΩ High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Package TO-247-3L Benefits • • • • Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 1 3 Equivalen t Circuit Applications • • • • • • 2 Solar Inverters Switch Mode Power Supplies High Voltage DC/DC converters Battery Chargers Motor Drives Pulsed Power Applications Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID ID(pulse) PD TJ , Tstg Continuous Drain Current 55 36 A VGS = 20 V, TC = 25˚C Note Fig. 19 VGS = 20 V, TC = 100˚C Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 278 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in 1 / 10 1.6mm (0.063”) from case for 10s M3 or 6-32 screw V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Drain-Source On-State Resistance Min. Typ. Max. Unit V VGS = 0 V, ID = 100 μA 3.2 4 V VDS = VGS , ID = 10mA V VDS = VGS , ID = 10mA,TJ = 150 °C 100 μA VDS = 1200 V, VGS = 0 V 250 nA 1200 2.0 2.4 1 44 82 18.2 gfs Transconductance Ciss Input Capacitance 2440 Coss Output Capacitance 171 Crss Reverse Transfer Capacitance 11 Eoss Coss Stored Energy 89 EON Turn-On Switching Energy (Body Diode) 1.7 EOFF Turn Off Switching Energy (Body Diode) 0.4 EON Turn-On Switching Energy (External SiC Diode) 1.3 EOFF Turn Off Switching Energy (External SiC Diode) 0.4 td(on) Turn-On Delay Time 13 Rise Time 61 Turn-Off Delay Time 25 Fall Time 13 Internal Gate Resistance 1.8 Qgs Gate to Source Charge 34 Qgd Gate to Drain Charge 42 Qg Total Gate Charge 120 tr td(off) tf RG(int) 17.2 2 / 10 52 mΩ S Test Conditions Fig. 11 VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 40 A VGS = 20 V, ID = 40 A, TJ = 150 °C VDS= 20 V, IDS= 40 A VDS= 20 V, IDS= 40 A, TJ = 150 °C VGS = 0 V pF Note VDS = 1000 V Fig. 4,5,6 Fig. 7 Fig. 17,18 f = 1 MHz μJ VAC = 25 mV Fig 16 mJ VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μH Fig. 25 VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μH ns VDD = 800 V, VGS = -5/20 V ID = 40 A RG(ext) = 2.5 Ω, RL = 20 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -5/20 V ID = 40 A Per IEC60747-8-4 pg 21 Fig. 27 Fig. 12 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET Reverse Diode Characteristics Symbol VSD IS IS, pulse Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions 4.0 V VGS = - 5 V, ISD = 20 A, TJ = 25 °C 3.6 V VGS = - 5 V, ISD = 20 A, TJ = 150 °C TC= 25 °C Continuous Diode Forward Current 60 A Diode Pulse Current 160 A trr Reverse Recovery Time 54 ns Qrr Reverse Recovery Charge 283 nC Irrm Peak Reverse Recovery Current 15 A Note Fig. 8, 9, 10 Note 1 VGS = - 5 V, Pulse width tP limited by Tjmax VGS = - 5 V, ISD = 40 A TJ = 25 °C VR = 800 V dif/dt = 1000 A/µs Note 1 Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol Parameter Typ. Max. RθJC Thermal Resistance from Junction to Case 0.33 0.45 RθJC Thermal Resistance from Junction to Ambient 40 3 / 10 Unit °C/W Test Conditions Note Fig. 21 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET Typical Performance 100 80 VGS = 20V VGS = 18V 80 VGS = 14V 60 VGS = 12V 40 VGS = 10V 20 0 0.0 2.5 Conditions: Tj = 25 °C tp = < 200 µs VGS = 16V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 100 Conditions: Tj = -55 °C tp = < 200 µs 5.0 7.5 VGS = 12V 60 40 VGS = 10V 20 0.0 2.5 Drain-Source Voltage, VDS (V) VGS = 14V VGS = 18V 1.6 VGS = 16V VGS = 12V VGS = 20V 60 10.0 Conditions: IDS = 40 A VGS = 15 V tp < 200 µs 1.8 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 80 7.5 Figure 2. Output Characteristics TJ = 25 °C 2.0 Conditions: Tj = 150 °C tp = < 200 µs 5.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 °C 100 VGS = 14V VGS = 16V 0 10.0 VGS = 20V VGS = 18V VGS = 10V 40 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 2.5 5.0 7.5 0.0 10.0 -50 -25 0 25 100 Tj = 150 °C 80 60 Tj = 25 °C 40 Tj = -55 °C 20 0 0 20 40 60 Drain-Source Current, IDS (A) 80 100 125 150 Conditions: IDS = 40 A tp < 200 µs 100 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 120 Conditions: VGS = 15 V tp < 200 µs 120 75 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 °C 140 50 Junction Temperature, Tj (°C) Drain-Source Voltage, VDS (V) 100 Figure 5. On-Resistance vs. Drain Current For Various Temperatures 80 VGS = 14 V VGS = 16 V 60 VGS = 18 V VGS = 20 V 40 20 0 -50 -25 0 25 50 75 Junction Temperature, Tj (°C) 100 125 150 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 4 / 10 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET 100 TJ = 150 °C 60 TJ = 25 °C TJ = -55 °C 40 20 0 2 4 6 8 10 12 -6 -4 -3 -2 0 -20 -40 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -7 -8 0 -60 Junction Temperature TJ (°C) 125 -2 -1 0 0 VGS = 0 V -40 VGS = -2 V -60 Drain-Source Voltage VDS (V) 25 -80 -100 Conditions: IDS = 40 A IGS = 50 mA VDS = 800 V TJ = 25 °C 20 1.0 100 -3 Figure 10. Body Diode Characteristic at 150 ºC 2.0 75 -4 VGS = -5 V -100 3.0 50 -5 Conditions: Tj = 150°C tp < 200 µs Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 4.0 -6 -80 Conditons VGS = VDS IDS = 10 mA 25 -100 -20 Figure 9. Body Diode Characteristic at 25 ºC 0 -80 Figure 8. Body Diode Characteristic at -55 ºC -1 5.0 0 -40 Drain-Source Voltage VDS (V) VGS = -2 V -25 0 Conditions: Tj = -55°C tp < 200 µs VGS = 0 V -50 -1 -20 14 VGS = -5 V 0.0 -2 -60 Drain-Source Current, IDS (A) -5 Drain-Source Current, IDS (A) -6 -3 VGS = -2 V Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -4 VGS = 0 V Gate-Source Voltage, VGS (V) -8 -5 VGS = -5 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 80 0 -7 -8 Conditions: VDS = 20 V tp < 200 µs 15 10 5 0 -5 150 0 20 40 60 80 100 120 140 Gate Charge, QG (nC) Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics 5 / 10 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET -3 -4 -2 -1 0 VGS = 0 V -6 0 -20 VGS = 5 V -40 VGS = 10 V VGS = 15 V -5 Drain-Source Current, IDS (A) -5 Drain-Source Current, IDS (A) -6 -60 VGS = 20 V VGS = 0 V -3 -2 -1 VGS = 5 V -40 VGS = 20 V Conditions: Tj = 25 °C tp < 200 µs Drain-Source Voltage VDS (V) -60 -80 -100 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 100 0 80 Stored Energy, EOSS (µJ) -20 Drain-Source Current, IDS (A) 0 VGS = 15 V VGS = 0 V VGS = 5 V VGS = 10 V -40 VGS = 15 V VGS = 20 V -60 60 40 20 -80 Conditions: Tj = 150 °C tp < 200 µs Drain-Source Voltage VDS (V) 0 -100 0 200 Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 600 800 10000 Ciss 1000 1000 1200 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 Capacitance (pF) Coss 100 Crss 10 1 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) 0 VGS = 10 V Figure 13. 3rd Quadrant Characteristic at -55 ºC -4 -1 -20 -100 Drain-Source Voltage VDS (V) -5 -2 -80 Conditions: Tj = -55 °C tp < 200 µs -6 -3 -4 0 50 100 Drain-Source Voltage, VDS (V) Coss 100 Crss 10 150 1 200 0 200 400 600 Drain-Source Voltage, VDS (V) 800 1000 Figure 18. Capacitances vs. Drain-Source Voltage (0-1000 V) Figure 17. Capacitances vs. Drain-Source Voltage (0-200 V) 6 / 10 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET 300 Conditions: TJ ≤ 150 °C 50 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 60 40 30 20 10 0 -50 -25 0 25 50 75 Case Temperature, TC (°C) 100 125 250 200 150 100 50 0 150 Figure 19. Continuous Drain Current Derating vs. Case Temperature -50 -25 0.1 0.05 0.02 0.01 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1.00 1 ms 100 ms 0.10 1 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 EOn 2 1.5 EOff 1 1000 4 ETotal EOn 3 2 EOff 1 0.5 0 100 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = - 5/+20 V L = 99 μH 5 ETotal 2.5 10 Drain-Source Voltage, VDS (V) Figure 22. Safe Operating Area Switching Loss (mJ) Switching Loss (mJ) 3 150 100 µs 6 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = - 5/+20 V L = 99 μH 3.5 125 10 µs Figure 21. Transient Thermal Impedance (Junction - Case) 4 100 1 µs 0.01 10E-6 1E-6 4.5 75 10.00 SinglePulse 1E-3 50 Limited by RDS On 0.3 10E-3 25 Case Temperature, TC (°C) 100.00 0.5 100E-3 0 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Conditions: TJ ≤ 150 °C 0 10 20 30 40 50 Drain to Source Current, IDS (A) 60 70 80 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 0 0 10 20 30 40 50 Drain to Source Current, IDS (A) 60 70 80 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 7 / 10 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET 3.5 3 2.5 2.5 EOn 2 1.5 EOff 1 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 2 EOn ETotal with Schottky 1.5 EOn with Schottky 1 EOff with Schottky 110 Conditions: TJ = 25 °C VDD = 800 V IDS = 40 A VGS = -5/+20 V 100 90 80 0 EOff 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 175 200 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Switching Times (ns) ETotal 0.5 0.5 0 Conditions: IDS = 40 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 99 μH ETotal Switching Loss (mJ) Switching Loss (mJ) 3 Conditions: TJ = 25 °C VDD = 800 V IDS = 40 A VGS = -5/+20 V L = 99 μH tr td(off) 70 60 50 40 tf 30 td(on) 20 10 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 Figure 27. Switching Times vs. RG(ext) Figure 28. Switching Times Definition 8 / 10 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET Test Circuit Schematic Figure 29. Clamped Inductive Switching Waveform Test Circuit ESD Ratings ESD Test Resulting Classification ESD-HBM 3A (4000V - 8000V) ESD-CDM C3 (>=1000V) 9 / 10 V 1.0 MDDG1C120R040K3 1200V N-Channel SiC Power MOSFET Package Dimensions ASE Package TO-247-3 A A1 A2 b b1 b3 c D D1 D2 E E1 E2 E3 E4 e N L L1 �P Q S T W X 4 1 T V 2 3 U W Advanced Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE 4.83 2.29 1.91 1.07 1.91 2.87 0.55 20.80 16.25 0.95 15.75 13.10 3.68 1.00 12.38 5.44 BSC 3 19.81 4.10 3.51 5.49 6.04 5.21 2.54 2.16 1.33 2.41 3.38 0.68 21.10 17.65 1.25 16.13 14.15 5.10 1.90 13.43 20.32 4.40 3.65 6.00 6.30 ���������� ��������� ������� DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 .190 .090 .075 .042 .075 .113 .022 .819 .640 .037 .620 .516 .145 .039 .487 .214 BSC 3 .780 .161 .138 .216 .238 .205 .100 .085 .052 .095 .133 .027 .831 .695 .049 .635 .557 .201 .075 .529 .800 .173 .144 .236 .248 Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 10 / 10 V 1.0