MMBT5551-E

MMBT5551-E SOT-23 Plastic-Encapsulate Transistors MMBT5551-E TRANSISTOR (NPN) SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING:G1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 0.6 A PC Collector Power Dissipation 0.3 W Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ (3)C G1 (1)B RΘJA (2)E ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions Min Typ Unit IC=100µA, IE=0 180 V IC=1mA, IB=0 160 V IE=10µA, IC=0 6 V = VCB 120V,IE 0 ICBO= VEB=4V,IC=0 IEBO Max hFE(1) * VCE=5V, IC=1mA 80 hFE(2) * VCE=5V, IC=10mA 100 hFE(3) * VCE=5V, IC=50mA 50 50 nA 50 nA 300 VCE(sat)1* IC=10mA, IB=1mA 0.2 V * IC=50mA, IB=5mA 0.25 V VBE(sat)1 * IC=10mA, IB=1mA 1.1 V VBE(sat)2 * IC=50mA, IB=5mA 1.1 V 300 MHz 6 pF VCE(sat)2 Transition frequency fT ICE=10V, IC=10mA,f=30MHz Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 100 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE RANK RANGE http://www.microdiode.com L H 100–200 200–300 Rev:2024A1 Page :1 MMBT5551-E Typical Characteristics Static Characteristic 18 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 80uA 15 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 IB=20uA 3 0 10 0 2 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 12 1 COLLECTOR CURRENT IC VCEsat —— 0.3 B IC 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 200 100 200 IC 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC —— Cob / Cib 100 200 IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 CAPACITANCE C Ta=100℃ Ta=25℃ Cib (pF) IC (mA) 100 100 (mA) β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 (V) β=10 COLLECTOR CURRENT Ta=100℃ hFE 70uA 12 DC CURRENT GAIN IC (mA) 90uA COLLECTOR CURRENT hFE —— IC 500 Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 1 10 REVERSE VOLTAGE IC PC 0.4 150 —— V 20 (V) Ta VCE=10V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (W) (MHz) Ta=25℃ 100 50 0.3 0.2 0.1 0.0 1 10 3 COLLECTOR CURRENT http://www.microdiode.com IC (mA) 20 30 0 25 50 75 AMBIENT TEMPERATURE Rev:2024A1 100 Ta 125 150 (℃ ) Page :2 MMBT5551-E Outlitne Drawing SOT-23 Package Outline Dimensions 1 e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2024A1 Page :3 MMBT5551-E SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 203×203×195 180,000 pcs 438×438×220 Rev:2024A1 Page :4 MMBT5551-E Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights or Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2024A1 Page :5