SI2301-3A

SI2301 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET V(BR)DSS -20V RDS(on)Typ ID Max 70mΩ@4.5V -3.0A 78mΩ@3.3V 3 1. GATE 2. SOURCE 1 3. DRAIN 2 APPLICATION Load Switch for Portable Devices z DC/DC Converter z Features Trench FET Power MOSFET MARKING Equivalent circuit D A1sHB G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 330 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±10 TA = 25 oC Continuous Drain Current o TA = 70 C Maximum Power Dissipation o TA = 25 C 2) o TA = 70 C Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) V -3.0 ID A -2.5 IDM Pulsed Drain Current 1) Unit A -12 1.2 PD W 0.9 TJ, Tstg -50 to 150 RthJA 100 o C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T19928A0 http://www.microdiode.com Rev:2019A0 Page :1 SI2301 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.6 -1 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 Gate-source leakage IGSS VDS =0V, VGS =±10V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance Forward transconductance a a RDS(on) gfs VGS =-4.5V, ID =-3A 70 90 VGS =-3.3V, ID =-2.0A 78 100 VDS =-5V, ID =-2.8A 4.0 V mΩ S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf 330 VDS =-10V,VGS =0V,f =1MHz pF 50 45 VDS =-10V,VGS =-4.5V,ID =-3A 6.6 0.8 nC 0.7 VDS =-10V,VGS =-4.5V,ID =-3A 1.4 11 VDD=-10V, RL=10Ω, 12 ID =-3A, ns 18 VGEN=-4.5V,Rg=3.3Ω 30 Drain-source body diode characteristics Continuous source-drain diode current Body diode voltage a) b) IS VSD TC=25℃ IS=-2A -0.85 -1.5 A -1.2 V Pulse test: pulse width ≤ 300us, duty cycle≤ 2% Guaranteed by design, not subject to production testing http://www.microdiode.com Rev:2019A0 Page :2 SI2301 -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics Tj - Junction Temperature (°C) -VDS, Drain -Source Voltage (V) Fig2. Normalized Threshold Voltage Vs. Temperature -ID, Drain-Source Current (A) -VDS, Drain -Source Voltage (mV) Fig1. Typical Output Characteristics -VGS, Gate -Source Voltage (V) -VGS, Gate -Source Voltage (V) Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) -ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com -VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2019A0 Page :3 SI2301 C, Capacitance (pF) -VGS, Gate-Source Voltage (V) Typical Characteristics -VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms http://www.microdiode.com Rev:2019A0 Page :4 SI2301 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2019A0 Page :5