MDD210N40P

MDD210N40P 40V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MOSFET used advanced trench technology and design to provide excellent RDS (ON) with low gate charge. It can be used in a wide variety of applications. 2. Features • LOW RDS(ON) :Vgs=10V typ=1.5mΩ • Extremely low switching loss • Excellent reliability and uniformity • Good stability and uniformity with high EAS 3. Application • Battery protection • Power management • Switched mode power supply 4. Absolute Maximum Ratings(TA=25°c unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V ID 210 A IDM 840 A RθJC 0.8 °C/W PD 310 W TJ -55~+150 °C Tstg -55~+150 °C Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Thermal Resistance, Junction to Case Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. Rev: 2024A0 MDD210N40P 40V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 D Drain 3 S Source Simplified outline G D Equivalent Circuit Package MDD 210N40P TO-220C-3L S 6. TA=25°C unless otherwise specified Symbol Marking Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 40 — — V Forward VGS=20V — — 100 nA Reverse V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current VGS=-20V — — -100 nA IDSS Drain-Source Leakage Current VDS=40V, VGS=0V — — 1 μA Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.65 2.5 V Drain-Source On-State Resistance VGS=10V, ID=30A — 1.5 2.5 — 1.8 2.7 mΩ Min Typ Max Unit — 12300 — pF — 770 — pF — 580 — pF — 190 — nC — 35.5 — nC — 42 — nC Min Typ Max Unit — 15 — ns — 38 — ns — 100 — ns — 30 — ns Min Typ Max Unit VGS(TH) RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=20A 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS=20V f=1MHz VGS=10V VDS=20V ID=20A 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS=10V VDD=30V RL=15Ω RG=2.5Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition mΩ Drain-Source Diode Forward Voltage IS=20A, V GS=0V — 0.8 — trr Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge — — — — ns Qrr IF=20A di/dt=100A/μs 50 V VSD Craftsman-Made Consciention Chip Rev: 2024A0 2/5 90 nC www.microdiode.com MDD210N40P 40V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2024A0 3/5 www.microdiode.com MDD210N40P 40V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 150 100 VGS = 10V.8V.6V VDS = 5V 120 80 VGS = 4.5V 90 VGS = 3.5V 60 TJ = 125°C ID(A) ID(A) 60 TJ = -55°C 40 TJ = 25°C 30 20 VGS = 3V VGS = 2.5V 0 0 1 2 3 4 0 0 5 1 2 3 VDS(V) Figure 1. Typ. output characteristics 8 20 7 18 ID = 20A RDS(ON) (mW) 14 5 4 VGS = 4.5V 12 10 8 6 2 TJ = 150℃ 4 VGS = 10V 1 8 6 Pulse Width≤300μs Duty Cycle≤0.5% 16 3 5 Figure 2. Typ. transfer characteristics 6 RDS(ON)(mΩ) 4 VGS(V) TJ = 25℃ 2 0 0 0 5 10 15 0 20 4 8 12 16 20 VGS(V) ID(A) Figure 4. On-Resistance vs. Gate Voltage Figure 3. On-Resistance vs. Drain Current 100 1.4 VGS = 0V VDS = VGS ID = 250uA 10 TJ = 125°C 1 IS(A) Normalized Vth 1.2 0.8 1 TJ = -55°C 0.6 TJ = 25°C 0.1 0.4 -80 -40 0 40 80 120 160 200 0.01 TJ(℃) Junction Temperature Figure 5. Normalized Threshold Voltage vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2024A0 0 0.2 0.4 0.6 0.8 1 1.2 VSD(V) Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDD210N40P 40V N-Channel Enhancement Mode MOSFET 12. Outline Drawing TO-220C-3L Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2024A0 5/5 www.microdiode.com