MDDG10R04P

MDDG10R04P 100V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MV MOSFET is produced using MDD Semiconductor's advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 4.4 mΩ at VGS = 10 V, ID = 100 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIS Tested • RoHS Compliant 3. Application • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 130 A Pulsed Drain Current (Note 2) IDM 520 A Single Pulsed Avalanche Energy (Note 3) EAS 306 mJ Thermal Resistance, steady-state RθJA 75 °C/W PD 150 W TJ -55~+150 °C Tstg -55~+150 °C Continuous Drain Current (Note 1) Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=50V, VGS=10V, L= 0.5mH, Rg= 25Ω, IAS=35A. Rev: 2024A0 MDDG10R04P 100V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 3 D S Simplified outline Equivalent Circuit Drain Source 6. TA=25°C unless otherwise specified Symbol Parameter Marking Package MDD G10R04P TO-220C-3L Condition VGS=0V, ID=250μA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current Gate Threshold Voltage VDS=VGS, ID=250μA Drain-Source On-State Resistance VGS=10V, ID=100A VGS(TH) RDS(ON) Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) tr td(off) tf 100 — — V — 100 nA Reverse VGS=-20V — — -100 nA VDS =100V, VGS=0V — 1 μA 2.0 — 3.0 4.0 — 3.2 4.4 mΩ Min Typ Max Unit — 5900 — pF — 950 — pF — 140 — pF — 52 — nC — 19 — nC — 12 — nC Min Typ Max Unit — 25 — ns — 55 — ns — 45 — ns — 16 — ns Min Typ Max Unit Condition VGS=0V VDS =50V f=1MHz VGS=10V VDS=50V ID=100A Parameter Condition Turn on Delay Time VGS=10V VDD =50V ID=100A RG=6Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Unit — 8. Switching Characteristics Symbol Max VGS=20V Parameter Ciss Typ Forward 7. Dynamic Electrical Characteristics Symbol Min Parameter Condition V Drain-Source Diode Forward Voltage IS=100A, VGS=0V — 1.0 — trr Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge — — — — ns Qrr IF=100A di/dt=100A/μs 85 V VSD Craftsman-Made Consciention Chip Rev: 2024A0 2/5 100 nC www.microdiode.com MDDG10R04P 10.Test Circuits And Waveforms 100V N-Channel Enhancement Mode MOSFET Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2024A0 3/5 www.microdiode.com MDDG10R04P 100V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 400 500 Tj=25℃ VGS= 10V VDS=5V 7V 150℃ 25℃ 300 6V ID-Drain Current (A) ID-Drain Current (A) 400 300 200 200 100 100 5V 0 0 0 2 1 3 4 2 0 5 Figure 1. Typ. output characteristics 6 8 Figure 2. Typ. transfer characteristics 8 6 5 VGS = 6V 4 VGS = 10V 3 2 1 0 0 5 10 15 20 RDS(on)-Drain to Source resistance (mΩ) 100 7 RDS(ON)(mΩ) 4 Vgs-Gate to Source Voltage (V) VDS-Drain to Source Voltage (V) ID=65A Tj=25℃ 80 60 40 20 0 4 ID(A) 6 7 8 9 10 VGS-Gate to Source Voltage (V) Figure 4. On-Resistance vs. Gate Voltage Figure 3. On-Resistance vs. Drain Current 6 5 100 ID=250uA Is-Reverse Drain Current (A) VGS(th)-Threshold Voltage Normalized 5 4 3 2 1 0 -75 -25 25 75 125 Tj-Junction Temperature (℃) Figure 5. Normalized Threshold Voltage vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2024A0 175 150℃ 25℃ 10 1 0.4 0.5 0.6 0.7 0.8 0.9 1 Vsd- Source to Drain Voltage (V) Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDDG10R04P 100V N-Channel Enhancement Mode MOSFET 12. Outline Drawing TO-220C-3L Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2024A0 5/5 www.microdiode.com