HBS410

HBS402 THRU HBS410 Voltage Range - 200 to 1000 Volts Current - 4.0 Ampere SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS Features HBS  Surface mount bridge, small package;  Ideal for printed circuit boards;  Glass passivated chip junction;  High forward current capability up to 4.0A;  High surge current capability;  High heat dissipation capability;  Low profile package;  Low forward voltage drop;  Plastic package has Underwrites Laboratory Flammability Classification 94V-0; Mechanical Data Case : JEDEC HBS Molded plastic body Mounting Position : Any High temperature soldering guaranteed: Solder Reflow 260℃,10seconds Polarity: As marked on body Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TA=25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage drop per diode at 4A Maximum DC reverse current at rated DC blocking voltage TA=25°C TA=125°C Typical capacitance （note1) Typical thermal resistance Operating junction and Storage Temperature Range SYMBOLS MDD MDD MDD MDD MDD HBS402 HBS404 HBS406 HBS408 HBS410 UNITS VRRM VRMS VDC 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V IF(AV) 4.0 A IFSM 120 A VF 1.10 V 5 µA IR 100 CJ 33 RθJA 67 RθJC 7 RθJL 11 Tj,TSTG -55 to +150 pF °C/W °C Note1: Measured at 1.0MHz and applied reverse voltage of 5.0V DC; http://www.microdiode.com Rev:2025A1 Page :1 HBS402 THRU HBS410 Voltage Range - 200 to 1000 Volts Current - 4.0 Ampere Ratings And Characteristic Curves FIG.2 Typical Forward Characteristics per Diode FIG.1 Derating Curve Output Rectified Current Instantaneous Forward Current (A) Average Forward Current (A) 6.0 5.0 Heat Sink Mounting 4.0 3.0 2.0 PCB Mounting 1.0 0.0 0 100 50 150 100 10 TA=125℃ TA=25℃ 1 0.1 0.01 0.4 Case Temperature,Tc (℃） Instantaneous Reverse Current (μA) Peak Forward Surge Current (A) 1.0 0.9 1.1 1000 8.3ms single half sine-wave 90 60 30 0 100 10 0.8 0.7 FIG.4 Typical Reverse Characteristics per Diode 150 1 0.6 Instantaneous Forward Voltage (V) FIG.3 Maximum Non-Repetitive Peak Forward Surge Current per Diode 120 0.5 Number of Cycles at 60Hz TA=150℃ 100 10 TA=125℃ 1 0.1 0.01 20 TA=25℃ 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) FIG.5 Typical Junction Capacitance per Diode Junction Capacitance (pF) 1000 100 10 1 The 0.1 curve above is for reference only. 1 3 5 Reverse Voltage (V) http://www.microdiode.com Rev:2025A1 Page :2 HBS402 THRU HBS410 Voltage Range - 200 to 1000 Volts Current - 4.0 Ampere Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A1 Page :3