MDD5N50D

MDD5N50D 500V N-Channel Enhancement Mode MOSFET TO-252 VDS 500V ID(Tc=25℃) 5A RDS(on),max 1.6Ω@VGS=10V Qg,typ 12.8nC 2 1 General Features  Low RDS(on)  Low gate charge  100% UIS tested  RoHS compliant 3 Equivalen t Circuit Application  Electronic ballast  Switched mode power supplies.  UPS. Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 5 A Pulsed Drain Current(Note 1) IDM 20 A EAS 210 mJ dv/dt 5 V/ns Power Dissipation PD 75 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 ~150 ℃ Avalanche Energy Single Pulsed (Note 2) Peak Diode Recovery dv/dt (Note 3) Thermal Characteristics Value Parameter Symbol Thermal resistance, Junction-to-case RθJC 1.67 °C/W Thermal resistance, Junction-to-ambient RθJA 110 °C/W Notes: TO-252 Unit 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 6.5A, Starting Tj= 25°C. 3. ISD = 5A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. 1/7 V 1.0 MDD5N50D 500V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 500 -- -- V Forward VGS=30V, VDS=0V -- -- 100 nA Reverse VGS=-30V, VDS=0V -- -- -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=500V, VGS=0V -- -- 1 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 -- 4.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=2.5A -- 1.35 1.6 Ω Min Typ Max Unit -- 537.5 -- pF -- 80.3 -- pF -- 4 -- pF -- 12.8 -- nC -- 3.9 -- nC -- 4.6 -- nC Min Typ Max Unit -- 10.3 -- ns ID=5A, -- 33.1 -- ns RG=10Ω -- 29.4 -- ns -- 13.2 -- ns Min Typ Max Unit Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Condition VDS=25V VGS=0V f=1MHz VDS=400V, VGS=10V, ID=5A (Note1,2) Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=250V, (Note1,2) Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) -- -- 5 A ISM Pulsed Current -- -- 20 A VSD Drain-Source Diode Forward Voltage IS=5A, VGS=0V -- -- 1.5 V trr Body Diode Reverse Recovery Time VR=250V -- 319.2 -- ns Qrr Body Diode Reverse Recovery Charge -- 1.6 -- uC IF=5A, -diF/dt =100A/µs Notes: 1.Pulse test ; Pulse width≤300us, duty cycle≤2%. 2.Essentially independent of operating temperature. 2/7 V 1.0 MDD5N50D 500V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics VGS=10V VGS=9V VGS=6V VGS=8V Tc = 25°C VGS=7V VGS=5.5V Tc = 150°C VDS ,Drain−source voltage (V) VGS ,Gate−source voltage (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test ID ,Drain current (A) Tj ,Junction temperature (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=10 V IDS=2.5 A Pulse test VGS=0 V IDS=0.25 mA Pulse test Tj ,Junction temperature (°C) Tj ,Junction temperature (°C) 3/7 V 1.0 MDD5N50D 500V N-Channel Enhancement Mode MOSFET 4/7 V 1.0 MDD5N50D 500V N-Channel Enhancement Mode MOSFET 5/7 V 1.0 MDD5N50D 500V N-Channel Enhancement Mode MOSFET RL VDS RG VGS VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms The curve above is for reference only. 6/7 V 1.0 MDD5N50D 500V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-252 SYMBOL A A1 A2 b b3 c D D1 E E1 e H L2 L3 L4 θ MIN 2.20 0.00 0.97 0.68 5.20 0.43 5.98 6.40 4.63 9.40 0.88 0.50 0° mm NOM 2.30 1.07 0.78 5.33 0.53 6.10 5.30REF 6.60 2.286BSC 10.10 0.51BSC - MAX 2.38 0.20 1.17 0.90 5.46 0.61 6.22 6.73 10.50 1.28 1.00 8° Package Marking and Ordering Information Part Number Marking Package MDD5N50D 5N50D TO-252 7/7 Units/Tube Units/Reel 2500 V 1.0