MDD20N06D

MDD20N06D 60V N-Channel Enhancement Mode MOSFET V(BR)DSS RDS(on)TYP 26mΩ@10V 60V 35mΩ@4.5V TO-252 ID 20A Features      1 1. Gate 2. Drain 3. Source 3 ([FHOOHQWSDFNDJHIRUJRRGKHDWGLVVLSDWLRQ 8OWUDORZJDWHFKDUJH /RZUHYHUVHWUDQVIHUFDSDFLWDQFH )DVWVZLWFKLQJFDSDELOLW\ $YDODQFKHHQHUJ\VSHFLILHG Application  Marking 3RZHUVZLWFKLQJDSSOLFDWLRQ Equivalen t Circuit XXX: Date Code MDD 2 20N06D XXX Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 20 A Pulsed Drain Current (Note 1) IDM 80 A EAS 49 mJ PD 40 W Thermal Resistance Junction-to-Ambient(Note 3) RθJA 100 ℃/ W Thermal Resistance Junction-to-Case(Note 3) RθJC 3.12 ℃/ W Storage Temperature Tstg -50 ~+150 Avalanche Energy Single Pulsed (Note 2) Power Dissipation ℃ Notes: 1.PW≤10μs, Duty cycle≤1%. 2.EAS condition: VDD=30V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 3.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 1/6 V 1.0 MDD20N06D 60V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 -- -- V IDSS Drain-Source Leakage Current VDS=48V, VGS=0V -- -- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.7 2.5 V VGS=10V, ID=10A -- RDS(ON) 26 Drain-Source On-State Resistance 35 mΩ VGS=4.5V, ID=10A -- 35 50 mΩ Min Typ Max Unit -- 850 1700 pF -- 60 120 pF -- 55 110 pF -- 18 36 nC -- 2.0 4.0 nC -- 4.4 8.8 nC Min Typ Max Unit VDS=30V, -- 4.2 -- ns VGS =10V, -- 3.4 -- ns RG=3Ω -- 16 -- ns (Note1,2) -- 2 -- ns Min Typ Max Unit Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Condition VDS=25V VGS=0V f=1MHz VDS=30V, VGS=10V, ID=10A (Note1,2) Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition RL=2.5Ω Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) -- -- 20 A ISM Pulsed Current -- -- 80 A VSD Drain-Source Diode Forward Voltage -- -- 1.2 V IS=10A, VGS=0V Notes: 1.Pulse test ; Pulse width 300us, duty cycle 2%. 2.Essentially independent of operating temperature. 2/6 V 1.0 MDD20N06D 60V N-Channel Enhancement Mode MOSFET ■ Typical Performance Characteristics Transfer Characteristics Output Characteristics 20 TJ=25℃ Pulsed VDS=8V Pulsed VGS=10V,8V,6V,4V,3.5V DRAIN CURRENT DRAIN CURRENT 15 ID (A) 15 ID (A) 20 10 VGS=3V 5 TJ=25℃ 10 5 0 0 0 1 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 1 (V) 2 50 5 VGS 6 (V) 80 ID=10A Pulsed Pulsed (m) TJ=25℃ 40 60 RDS(ON) VGS= 4.5V RDS(ON) 30 ON-RESISTANCE (m) 4 RDS(ON)—— VGS RDS(ON) —— ID ON-RESISTANCE 3 GATE TO SOURCE VOLTAGE VGS= 10V 20 10 40 TJ=125℃ 20 TJ=25℃ 0 4 6 8 10 DRAIN CURRENT 12 ID 14 16 0 (A) 2 4 6 8 GATE TO SOURCE VOLTAGE IS —— VSD VGS 10 12 (V) Threshold Voltage 3.0 20 Pulsed Pulsed 10 VTH TJ=125℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 2.5 TJ=25℃ 1 2.0 1.5 1.0 0.5 0.1 1 0.2 SOURCE TO DRAIN VOLTAGE 0.0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3/6 100 TJ (℃ ) 125 MDD20N06D 60V N-Channel Enhancement Mode MOSFET Gate Charge Capacitances 10 f=1MHz Pulsed VDS=30V ID =10A Coss 100 Crss 10 0.1 Pulsed 8 VGS Ciss 1000 GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) (V) 10000 6 4 2 0 1 DRAIN TO SOURCEVOLTAGE 10 0 30 VDS (V) 5 10 GATE CHARGE (nC) 4/6 15 20 MDD20N06D 60V N-Channel Enhancement Mode MOSFET Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/6 V 1.0 MDD20N06D 60V N-Channel Enhancement Mode MOSFET Outlitne Drawing TO-252 Package Outline Dimensions Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 6/6 V 1.0