MDD20N50F

MDD20N50F 500V N-Channel Enhancement Mode MOSFET VDS 500V ID(Tc=25℃) 20A RDS(on),max 0.29Ω@VGS=10V Qg,typ 50.5nC TO-220F-3L 1 General Features  Low RDS(on)  Low gate charge  100% UIS tested  RoHS compliant 2 3 Equivalen t Circuit Application  Power factor correction.  Switched mode power supplies. Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 20 A Pulsed Drain Current(Note 1) IDM 80 A EAS 1200 mJ Power Dissipation TO-220F PD 37.8 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 ~150 ℃ Avalanche Energy Single Pulsed (Note 2) Thermal Characteristics Value Parameter Symbol Thermal resistance, Junction-to-case RθJC 3.3 °C/W Thermal resistance, Junction-to-ambient(Note 3) RθJA 60 °C/W Notes: TO-220F Unit 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 15.5A, Starting Tj= 25°C. 3. The value of RthJA is measured by placing the device in a still air box which is one cubic foot. 1/7 V 1.0 MDD20N50F 500V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 500 -- -- V Forward VGS=30V, VDS=0V -- -- 100 nA Reverse VGS=-30V, VDS=0V -- -- -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=500V, VGS=0V -- -- 1 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 -- 4.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=10A -- 0.23 0.29 Ω Min Typ Max Unit -- 3078 -- pF -- 263 -- pF -- 19 -- pF -- 50.5 -- nC -- 12.7 -- nC -- 15.8 -- nC Min Typ Max Unit -- 22.7 -- ns ID=10A, -- 16.4 -- ns RG=5Ω -- 127 -- ns -- 15.2 -- ns Min Typ Max Unit Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Condition VDS=25V VGS=0V Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge f=250KHz VDS=400V, VGS=10V, ID=20A (Note1,2) Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=250V, (Note1,2) Source Drain Diode Characteristics Symbol Parameter Condition VSD Drain-Source Diode Forward Voltage IS=10A, VGS=0V -- -- 1.3 V trr Body Diode Reverse Recovery Time VGD=0V -- 313.2 -- ns Qrr Body Diode Reverse Recovery Charge -- 3.3 -- uC IF=20A, -diF/dt =100A/µs Notes: 1.Pulse test ; Pulse width≤300us, duty cycle≤2%. 2.Essentially independent of operating temperature. 2/7 V 1.0 MDD20N50F 500V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics 35 45 VGS=8V 40 VGS=7V VGS=10V 35 30 VGS=6V  Drain current ID(A) Drain current ID(A) 30 20 25 VGS=5.5V 20 15 5 10 5 VGS=4.5V 0 5 10 15 0 20 Drain-source voltage VDS(V) 2 4 6 8 10 Figure 4. Threshold Voltage vs. Temperature 1.0 1.4 Gate threshold voltage Vth(normalized) 0.9 0.8 0.7 RDS(ON)( 0 Gate-source voltage VGS(V) Figure 3. On-Resistance Variation vs. Drain Current 0.6 0.5 0.4 0.3 0.2 0.1 0.0  T=150 C 15 VGS=5V 10 0 T=25 C 25 VGS=10V 0 1 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 10 IDS=0.25 mA Pulse test -25 0 Drain current ID(A) Figure 5. Breakdown Voltage vs. Temperature 50 75 100 125 150 Figure 6. On-Resistance vs. Temperature 2.2 1.4 Drain-source voltage BV DSS(normalized) 2.0 1.8 Drain-source on-resistance RDS(ON)(normalized) 1.2 1.0 0.8 0.6 0.4 -50 25 Junction temperature Tj (°C) VGS=0 V IDS=0.25 mA Pulse test -25 0 25 50 75 100 125 1.6 1.4 1.2 1.0 0.8 0.6 0.4 VGS=10 V IDS=10A Pulse test 0.2 150 0.0 -50 -25 0 25 50 75 100 125 150 Junction temperature Tj (°C) Junction temperature Tj (°C) 3/7 V 1.0 MDD20N50F 500V N-Channel Enhancement Mode MOSFET Figure 7. Drain current derating Figure 8. Capacitance Characteristics 25 Drain current I D(A) 20 Ciss 1000 Capacitance (pF) 15 100 10 5 0 Coss 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0 25 50 75 100 125 150 1 0 100 Case Temperature TC(°C()°C) Crss 200 300 400 500 Drain-source voltage VDS(V) Figure 9. Gate Charge Characteristics Figure 10. Body Diode Transfer Characteristics 200 180 160 Diode curent IS(A) 140 120 100 80 60 VDS=400V, 40 ID=20A 20 0 0.0  T=150 C  T=25 C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Diode forward voltage V DS(V) Total gate charge (nC) Figure 11. Power Dissipation vs. Temperature 45 40 35 PD(W) 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case temperature(C) 4/7 V 1.0 MDD20N50F 500V N-Channel Enhancement Mode MOSFET Figure 13. Transient Thermal Impedance, Junction to Case, ZJC(normalized) Transient Thermal Resistance 1 0.7 0.5 0.3 0.1 0.1 RθJC =3.3℃/W 0.05 0.01 0.02 0.01 1E-3 PD single pulse 1E-4 1E-6 1E-5 Ton 1E-4 1E-3 0.01 0.1 T 1 10 t,Time (s) 5/7 V 1.0 MDD20N50F 500V N-Channel Enhancement Mode MOSFET RL VDS RG VGS VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms The curve above is for reference only. 6/7 V 1.0 MDD20N50F 500V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-220F-3L SYMBOL E A A1 A4 c D H1 e L L1 ФP ФP3 F3 G3 b1 b2 MIN 9.96 4.50 2.34 2.56 0.40 15.57 12.68 2.88 3.03 3.15 3.15 1.25 1.18 0.70 mm NOM 10.16 4.70 2.54 2.76 0.50 15.87 6.70REF 2.54BSC 12.98 3.03 3.18 3.45 3.30 1.35 1.28 0.80 MAX 10.36 4.90 2.74 2.96 0.65 16.17 13.28 3.18 3.38 3.65 3.45 1.55 1.43 0.95 Package Marking and Ordering Information Part Number Marking Package Units/Tube MDD20N50F 20N50F TO-220F 50 7/7 Units/Reel V 1.0