MDD13N50F

MDD13N50F 500V N-Channel Enhancement Mode MOSFET VDS 500V ID(Tc=25℃) 13A RDS(on),max 0.52Ω@VGS=10V Qg,typ 37nC TO-220F-3L 1 General Features  Low RDS(on)  Low gate charge  100% UIS tested  RoHS compliant 2 3 Equivalen t Circuit Application  Electronic ballast  Switched mode power supplies.  UPS. Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 13 A Pulsed Drain Current(Note 1) IDM 52 A EAS 845 mJ dv/dt 4.5 V/ns Power Dissipation TO-220F PD 50 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 ~150 ℃ Avalanche Energy Single Pulsed (Note 2) Peak Diode Recovery dv/dt (Note 3) Thermal Characteristics Value Parameter Symbol Thermal resistance, Junction-to-case RθJC 2.58 °C/W Thermal resistance, Junction-to-ambient RθJA 62.5 °C/W Notes: TO-220F Unit 1. Pulse width limited by maximum junction temperature. 2. L=5mH, IAS = 13A, Starting Tj= 25°C. 3. ISD = 13A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. 1/6 V 1.0 MDD13N50F 500V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 500 -- -- V Forward VGS=30V, VDS=0V -- -- 100 nA Reverse VGS=-30V, VDS=0V -- -- -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=500V, VGS=0V -- -- 1 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 -- 4.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=6.5A -- 0.35 0.52 Ω Min Typ Max Unit -- 2000 -- pF -- 190 -- pF -- 10 -- pF -- 37 -- nC -- 10.9 -- nC -- 17.2 -- nC Min Typ Max Unit -- 90 -- ns ID=13A, -- 160 -- ns RG=25Ω -- 150 -- ns -- 60 -- ns Min Typ Max Unit Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Condition VDS=25V VGS=0V f=1MHz VDS=400V, VGS=10V, ID=13A (Note1,2) Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=250V, (Note1,2) Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) -- -- 13 A ISM Pulsed Current -- -- 52 A VSD Drain-Source Diode Forward Voltage IS=13A, VGS=0V -- -- 1.4 V trr Body Diode Reverse Recovery Time VGD=0V -- 410 -- ns Qrr Body Diode Reverse Recovery Charge -- 4.5 -- uC IF=13A, -diF/dt =100A/µs Notes: 1.Pulse test ; Pulse width≤300us, duty cycle≤2%. 2.Essentially independent of operating temperature. 2/6 V 1.0 MDD13N50F 500V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams On-Regin Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics 3/6 V 1.0 MDD13N50F 500V N-Channel Enhancement Mode MOSFET Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Drain Current Vs. Case Temperature Maximum Safe Operating Area 4/6 V 1.0 MDD13N50F 500V N-Channel Enhancement Mode MOSFET RL VDS RG VGS VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms The curve above is for reference only. 5/6 V 1.0 MDD13N50F 500V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-220F-3L SYMBOL E A A1 A4 c D H1 e L L1 ФP ФP3 F3 G3 b1 b2 MIN 9.96 4.50 2.34 2.56 0.40 15.57 12.68 2.88 3.03 3.15 3.15 1.25 1.18 0.70 mm NOM 10.16 4.70 2.54 2.76 0.50 15.87 6.70REF 2.54BSC 12.98 3.03 3.18 3.45 3.30 1.35 1.28 0.80 MAX 10.36 4.90 2.74 2.96 0.65 16.17 13.28 3.18 3.38 3.65 3.45 1.55 1.43 0.95 Package Marking and Ordering Information Part Number Marking Package Units/Tube MDD13N50F 13N50F TO-220F 50 6/6 Units/Reel V 1.0