MDD2304

MDD2304 30V N-Channel Enhancement Mode MOSFET Description SOT-23  The MDD2304 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.  It can be used in a wide variety of applications. 3 1 General Features     1. Gate Low RDS(on) @VGS=10V 5V Logic Level Control N Channel SOT23 Package Pb−Free, RoHS Compliant 2. Source 3. Drain Application Marking • • • • • D G XXX:Date Code XXX S4 2 DC-to-DC converters Power management in battery-driven portables Low-side load switch Switching circuits High-speed line driver Equivalent Circuit S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 2.5 A Pulsed Drain Current (Note 1) IDM 10 A Power Dissipation PD 0.25 W RθJA 500 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -50 ~+150 ℃ Thermal Resistance from Junction to Ambient Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/5 V 1.1 MDD2304 30V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current Condition Min Typ Max Unit VGS=0V, ID=250μA 30 -- -- V TA=25℃ VDS=30V, VGS=0V -- -- 1 uA TA=125℃ VDS=24V, VGS=0V -- -- 100 uA -- -- ±100 nA 1.0 1.6 2.5 V VGS=10V, ID=3.6A -- 26 35 mΩ VGS=4.5V, ID=2.0A -- 39 53 mΩ Min Typ Max Unit -- 240 -- pF -- 110 -- pF -- 17 -- pF -- 4.5 -- nC -- 0.8 -- nC -- 1.0 -- nC Min Typ Max Unit -- 8 -- ns -- 12 -- ns -- 17 -- ns -- 8 -- ns Min Typ Max Unit IGSS Gate-Source Leakage Current VDS=±20V, VDS=0V VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA RDS(ON) Drain-Source On-State Resistance(Note 2) Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Condition VDS=15V VGS=0V f=1MHz VDS=15V, VGS=10V, ID=4A Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=15V, VGS =10V, ID=1A, RG=6.0Ω Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) TA=25℃ -- -- 1.8 A VSD Drain-Source Diode Forward Voltage IS=4A, VGS=0V -- 0.85 1.2 V Notes: ①Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width≤300us, duty cycle≤2% 2/5 V 1.1 MDD2304 30V N-Channel Enhancement Mode MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V)  TYPICAL CHARACTERISTICS VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. Normalized Threshold Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) Fig1. Typical Output Characteristics VGS, Gate -Source Voltage (V) ID , Drain Current (A) Fig4. On-Resistance vs. Drain Current and Gate -ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage 3/5 Fig6. Maximum Safe Operating Area V 1.1 MDD2304 C, Capacitance (pF) VGS, Gate-Source Voltage (V) 30V N-Channel Enhancement Mode MOSFET VDS, Drain-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. 4/5 V 1.1 MDD2304 30V N-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol 1 e Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 5 /5 V 1.1