MDD02P60A

MDD02P60A 60V P-Channel Enhancement Mode MOSFET 1. Description This 60V P-channel MOSFET is based on MDD's unique device design to achieve low RDS(ON), fast switching and excellent avalanche characteristics. 2. Features • High dense cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability 3. Application • Load Switch for Portable Devices • Battery Powered System • DC-DC converter • LCD Display inverter • Portable Equipment 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V ID -2.0 A Pulsed Drain Current (Note 1) IDM -8.0 A Thermal Resistance, Junction-Ambient (Note 2) RθJA 75 °C/W Power Dissipation PD 1.7 W Junction Temperature TJ -55~+150 °C Storage Temperature Tstg -55~+150 °C Continuous Drain Current (Note 1) • Stresses exceeding Maximum Ratings may damage the device. • Maximum Ratings are stress ratings only. • Functional operation above the Recommended Operating Conditions is not implied. • Extended exposure to stresses above the recommended Operating Conditions may affect device reliability Notes: 1.Pulse width limited by maximum allowable junction temperature 2.Surface Mounted on FR4 Board, t＜10 sec. Rev: 2024A0 MDD02P60A 60V P-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Simplified outline Equivalent Circuit 1 Package 02P60A SOT-23 XXY:Date Code 2 6. TA=25°C unless otherwise specified Symbol Marking 3 Parameter V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Condition Min Typ Max Unit VGS=0V, ID=-250μA -60 — — V Forward VGS=-20V — — -100 nA Reverse VGS=20V — — 100 nA Drain-Source Leakage Current VDS=-60V, VGS=0V — — -1 μA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.5 -2.5 V RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-1.8A — 140 178 mΩ VGS=-4.5V, ID=-1.4A — 175 215 mΩ Condition Min Typ Max Unit — 450 — pF — 27 — pF — 22 — pF — 9 — nC — 1.6 — nC — 1.9 — nC Min Typ Max Unit — 40 — ns — 35 — ns — 15 — ns — 10 — ns Min Typ Max Unit 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS=-30V f=1.0MHz VGS=-10V VDS=-30V ID=-2A 8. Switching Characteristics Symbol td(on) Parameter Condition Turn on Delay Time VGS=-10V VDS=-30V ID=-2A RG=3.3Ω Turn on Rise Time tr td(off) tf Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Parameter Condition VSD Drain-Source Diode Forward Voltage IS=-2A, VGS=0V — -0.8 -1.2 V ISD Source drain current(Body Diode) TA=25°C — — -2.0 A Craftsman-Made Consciention Chip Rev: 2024A0 2/5 www.microdiode.com MDD02P60A 60V P-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate Charge test Circuit Figure 2. Switchingtime testcircuit & waveforms The curve above is for reference only. Craftsman-Made Consciention Chip Rev: 2024A0 3/5 www.microdiode.com MDD02P60A 60V P-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams -8 -8 TJ=25℃ -6 (A) (A) Pulsed VGS= -4V -6 DRAIN CURRENT ID ID DRAIN CURRENT VDS=-5V VGS= -10V,-5V Pulsed VGS= -3.5V -4 -2 TJ=25℃ -4 -2 VGS= -3V VGS= -2.5V 0 0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS 0 -5 -1 -2 (V) -3 -4 GATE TO SOURCE VOLTAGE Figure 1. Typ. output characteristics VGS Fig 2. Transfer Charhacteristics RDS(ON)—— VGS RDS(ON) —— ID 300 200 ID=-2A Pulsed TJ=25℃ Pulsed 250 TJ=125℃ RDS(ON) 160 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) (m) VGS= -4.5V 180 140 VGS= -10V 200 TJ=25℃ 150 120 100 0.0 -0.5 -1.0 -1.5 DRAIN CURRENT -2.0 ID -2.5 100 -3.0 -2 -4 -10 (V) Threshold Voltage -2.2 Pulsed IS (A) (V) Pulsed THRESHOLD VOLTAGE TJ=25℃ -1 -0.3 -0.6 -2.0 VTH TJ=125℃ -0.1 -0.0 -8 VGS Fig 4. RDSon vs VGS Characteristics IS —— VSD -7 -6 GATE TO SOURCE VOLTAGE (A) Fig 3. RDson vs ID Characteristics SOURCE CURRENT -5 (V) -0.9 SOURCE TO DRAIN VOLTAGE -1.2 -1.8 -1.6 -1.4 -1.2 25 -1.5 VSD (V) 50 75 JUNCTION TEMPERATURE Fig 5. Source current Characteristics 100 TJ 125 (℃ ) Fig 6. Typ. Threshold Voltage Characteristics The curve above is for reference only Craftsman-Made Consciention Chip Rev: 2024A0 4/5 www.microdiode.com MDD02P60A 60V P-Channel Enhancement Mode MOSFET 12. Outline Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol 1 e Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° 13. Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 14. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2024A0 5/5 www.microdiode.com