MDD4N60F

MDD4N60F 600V N-Channel Enhancement Mode MOSFET VDS 600V ID(Tc=25℃) 4A RDS(on),max 2.4Ω@VGS=10V Qg,typ 12.8nC TO-220F-3L 1 General Features  Low RDS(on)  Low gate charge  100% UIS tested  RoHS compliant 2 3 Equivalen t Circuit Application  Power faction correction.  Switched mode power supplies.  LED driver. Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4 A Pulsed Drain Current(Note 1) IDM 16 A EAS 245 mJ dv/dt 5 V/ns Power Dissipation TO-220F PD 32 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 ~150 ℃ Avalanche Energy Single Pulsed (Note 2) Peak Diode Recovery dv/dt (Note 3) Thermal Characteristics Value Parameter Symbol Thermal resistance, Junction-to-case RθJC 3.8 °C/W Thermal resistance, Junction-to-ambient RθJA 62.5 °C/W Notes: TO-220F Unit 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 7A, Starting Tj= 25°C. 3. ISD = 4A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. 1/7 V 1.0 MDD4N60F 600V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 600 -- -- V Forward VGS=30V, VDS=0V -- -- 100 nA Reverse VGS=-30V, VDS=0V -- -- -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=600V, VDS=0V -- -- 1 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 -- 4.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=2A -- 2.0 2.4 Ω Min Typ Max Unit -- 580 -- pF -- 50 -- pF -- 3 -- pF -- 12.8 -- nC -- 3.1 -- nC -- 5.5 -- nC Min Typ Max Unit -- 13 -- ns ID=4A, -- 31 -- ns RG=10Ω -- 38 -- ns -- 17 -- ns Min Typ Max Unit Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Condition VDS=25V VGS=0V f=1MHz VDS=480V, VGS=10V, ID=4A (Note1,2) Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=300V, (Note1,2) Source Drain Diode Characteristics Symbol Parameter Condition VSD Drain-Source Diode Forward Voltage IS=4A, VGS=0V -- -- 1.5 V trr Body Diode Reverse Recovery Time VR=400V -- 275 -- ns Qrr Body Diode Reverse Recovery Charge -- 1.43 -- uC IF=4A, -diF/dt =100A/µs Notes: 1.Pulse test ; Pulse width≤300us, duty cycle≤2%. 2.Essentially independent of operating temperature. 2/7 V 1.0 MDD4N60F 600V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics VGS=10V VGS=9V VGS=6V VGS=8V Tc = 25°C VGS=7V VGS=5.5V Tc = 150°C VDS ,Drain−source voltage (V) VGS ,Gate−source voltage (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test ID ,Drain current (A) Tj ,Junction temperature (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=10 V IDS=2 A Pulse test VGS=0 V IDS=0.25 mA Pulse test Tj ,Junction temperature (°C) Tj ,Junction temperature (°C) 3/7 V 1.0 MDD4N60F 600V N-Channel Enhancement Mode MOSFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist VDS=300 VDS=120 Ciss Notes:f = 1 MHz,VGS=0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS=480 Coss Crss ID = 4 A VDS ,Drain-Source Voltage (V) QG ,Total Gate Charge (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area TO-220/TO-252 TO-220F 100us 100us 10ms Limited by RDS(on) 1ms 10ms 1ms Limited by RDS(on) DC Notes: T = 25°C c Notes: T = 25°C j T = 150°C DC c T = 150°C j Single Pulse Single Pulse VDS ,Drain-Source Voltage (V) VDS ,Drain-Source Voltage (V) Figure 11. Power Dissipation vs. Temperature Figure 12. Power Dissipation vs. Temperature TO-220/TO-252 TO-220F Tc ,Case temperature (°C) Tc ,Case temperature (°C) 4/7 V 1.0 MDD4N60F 600V N-Channel Enhancement Mode MOSFET Figure 13. Continuous Drain Current vs. Temperature Figure 14. Body Diode Transfer Characteristics Tc = 150° Tc = 25°C VSD ,Source-Drain Voltage (V) Tc ,Case temperature (°C) Figure 15 Transient Thermal Impendance,Junction to Case, TO-220F P DM In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse t Duty = t/T T Z (t)=3.8°C/W Max. θJC t ,Pulse Width (s) Figure 16. Transient Thermal Impendance,Junction to Case, TO-220/TO-252 In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse P DM t Duty = t/T Z (t)=1.62°C/W Max.T θJC t ,Pulse Width (s) 5/7 V 1.0 MDD4N60F 600V N-Channel Enhancement Mode MOSFET RL VDS RG VGS VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms The curve above is for reference only. 6/7 V 1.0 MDD4N60F 600V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-220F-3L SYMBOL E A A1 A4 c D H1 e L L1 ФP ФP3 F3 G3 b1 b2 MIN 9.96 4.50 2.34 2.56 0.40 15.57 12.68 2.88 3.03 3.15 3.15 1.25 1.18 0.70 mm NOM 10.16 4.70 2.54 2.76 0.50 15.87 6.70REF 2.54BSC 12.98 3.03 3.18 3.45 3.30 1.35 1.28 0.80 MAX 10.36 4.90 2.74 2.96 0.65 16.17 13.28 3.18 3.38 3.65 3.45 1.55 1.43 0.95 Package Marking and Ordering Information Part Number Marking Package Units/Tube MDD4N60F 4N60F TO-220F 50 7/7 Units/Reel V 1.0