MDD4N60D

MDD4N60D 600V N-Channel Enhancement Mode MOSFET VDS 600 V ID(Tc=25℃) 4A RDS(on),typ 1.75Ω@VGS=10V Qg,typ 12nC 2 1 3 General Features      Equivalen t Circuit Ultra low gate charge Low reverse transfer Capacitance Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness Application    High efeciency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplies Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4 A Pulsed Drain Current(Note 1) IDM 16 A EAS 134 mJ IS 4 A Diode pulse current IS,pulse 16 A Peak Diode Recovery dv/dt (Note 3) dv/dt 5 Power Dissipation PD 100 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 ~150 ℃ Avalanche Energy Single Pulsed (Note 2) Continuous diode forward current V/ns Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, Junction-to-case RθJC 1.2 °C/W Thermal resistance, Junction-to-ambient RθJA 32.8 °C/W Notes: 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 5.2A, Starting Tj= 25°C. 3. ISD = 4A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. 1/5 V 1.1 MDD4N60D 600V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 600 -- -- V Forward VGS=30V, VDS=0V -- -- 100 nA Reverse VGS=-30V, VDS=0V -- -- -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=600V, VGS=0V -- -- 1 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 -- 4.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=2A -- 1.75 2.5 Ω Min Typ Max Unit -- 600 -- pF -- 61 -- pF -- 10 -- pF -- 12 -- nC -- 3.2 -- nC -- 4.4 -- nC Min Typ Max Unit -- 12 -- ns -- 18 -- ns -- 49 -- ns -- 27 -- ns Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Condition VDS=25V VGS=0V Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge f=1MHz VDS=300V, VGS=10V, ID=2A Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition Vgs= 10V VDS=300V, ID=2A, RG=24Ω Source Drain Diode Characteristics Symbol Parameter Condition Min Typ Max Unit ISD Source drain current(Body Diode) -- -- 4 A ISM Pulsed Current -- -- 16 A VSD Drain-Source Diode Forward Voltage IS=4A, VGS=0V -- 0.8 1.2 V trr Body Diode Reverse Recovery Time VR=400 -- 290 -- ns Qrr Body Diode Reverse Recovery Charge -- 0.8 -- uC IF=4A, di/dt =100A/µs 2/5 V 1.1 MDD4N60D 600V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics 8 8 VDS = 20V VGS = 10V VGS =6.0V 6 TJ = -55°C 6 ID(A) ID(A) VGS = 5.0V 4 2 4 2 TJ = 25°C VGS = 4.5V TJ = 125°C 0 0 0 5 10 15 20 0 4 8 VDS(V) 12 16 VGS(V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Body Diode Characteristics 4000 100 VGS = 0V 3200 2400 TJ = 125°C IS(A) RDS(ON)(mΩ) 10 VGS = 10V 1600 1 TJ = -55°C 0.1 800 TJ = 25°C 0 0 1 2 3 4 5 6 0.01 0 0.2 0.4 ID(A) 1 1.2 Figure 6. On-Resistance vs. Temperature 3 VGS = 10V ID = 2A ID = 1mA 1.15 2.5 1.10 Normalized RDS(ON) Normalized V(BR)DSS 0.8 VSD(V) Figure 5. Breakdown Voltage vs. Temperature 1.20 0.6 1.05 1.00 0.95 2 1.5 1 0.90 0.5 0.85 0 0.80 -80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200 TJ(℃) Junction Temperature TJ(℃) Junction Temperature 3/5 V 1.1 MDD4N60D 600V N-Channel Enhancement Mode MOSFET RL VDS RG VGS VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms The curve above is for reference only. 4/5 V 1.1 MDD4N60D 600V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-252 Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). 5/5 V 1.1