2N7002KDW

2N7002KDW SOT-363 Plastic-Encapsulate MOSFETS SOT-363 60V N-Channel Enhancement Mode MOSFET RDS(on)Max V(BR)DSS 2.7Ω@10V 60 V ID MAX 0.34A 3.0Ω@4.5V Mechanical Data Feature z z z z z z z High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices. DC/DC Converter. z z z Marking SOT-363 Small Outline Plastic Package. Epoxy UL: 94V-0. Mounting Position: Any. Equivalent circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 0.34 A Power Dissipation PD 150 mW RθJA 833 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient ℃ The above data are for reference only. http://www.microdiode.com Rev:2024A1 Page :1 2N7002KDW MOSFET ELECTRICAL CHARACTERISTICS Ta=25°C unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 -- -- V IDSS Zero Gate Voltage Drain Current(TA=25℃) VDS=48V, VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V -- -- ±10 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=1mA 1.0 1.3 2.5 V RDS(ON) Drain-Source On-State Resistance② VGS=10V, ID=0.5A -- 0.9 2.7 Ω RDS(ON) Drain-Source On-State Resistance② VGS=4.5V, ID=0.2A -- 1.1 3 Ω -- -- 40 pF -- -- 30 pF -- -- 10 pF -- 30 -- nC -- -- 10 ns -- -- 15 ns VGS=0V, IS=300mA, VR=25V, dIs/dt=-100A/us - 30 -- ns Igs=±1mA(Open Drain) ±21.5 -- ±32 V Dynamic Electrical Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qr Recovered Charge VDS=10V, VGS=0V, f=1MHz VDS=0V,ID=0.2A, VR=25V,dIs/dt=-100A/us Switching Characteristics t d(on) Turn on Delay Time t d(off) Turn Off Delay Time t rr Reverse Recovery Time VDD=50V, RL=250Ω, VGS=10V, RG=50Ω Source Drain Diode Characteristics BVGSO Gate-Source Breakdown Voltage Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. http://www.microdiode.com Rev:2024A1 Page :2 2N7002KDW Typical Characteristics The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :3 2N7002KDW Outlitne Drawing SOT-363Package Outline Dimensions Suggested Pad Layout http://www.microdiode.com Rev:2024A1 Page :4