MDD3407A

MDD3407A -30V P-Channel Enhancement Mode MOSFET SOT-23-3L 3 V(BR)DSS RDS(on)Typ ID @ 25℃ -30V 38mΩ@-10V -4.1A 1. Gate 2. Source 50mΩ@-4.5V 3. Drain 2 1 Feature • • • Advanced Trench Technology Equivalent Circuit Excellent RDs(on) and Low Gate Charge performance Lead Free D Application • • • • G Load Switch Switching circuits S High-speed line driver Power Management Functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -4.1 A Pulsed Drain Current (Note 1) IDM -16.4 A Power Dissipation(Note 2) PD 1.3 W RθJA 90 ℃/W TJ,Tstg -50 ~150 ℃ Thermal Resistance from Junction to Ambient(Note 2) Junction Temperature and Storage Temperature Notes: Stresses exceeding m aximum r atings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/5 V 1.1 MDD3407A -30V P-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 -- -- V IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V -- -- -1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250μA -1.2 -1.5 -2.5 V RDS(ON) Drain-Source On-State Resistance(Note 3) VGS=-10V, ID=-4A -- 38 55 mΩ VGS=-4.5V, ID=-3A -- 50 75 mΩ Min Typ Max Unit -- 540 -- pF -- 70 -- pF -- 55 -- pF Dynamic Electrical Characteristics Symbol Parameter Condition Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=-15V -- 10 -- nC Qgs Gate Source Charge VGS=-10V -- 2.1 -- nC Qgd Gate Drain Charge -- 2.7 -- nC Min Typ Max Unit -- 3 -- ns -- 2.8 -- ns -- 25 -- ns -- 13 -- ns VDS=-15V VGS=0V f=1MHz ID=-2A Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=-15V VGS =-10V ID=-2A RG=3Ω Source Drain Diode Characteristics Symbol Min Typ Max Unit IS Maximum Continuous Drain to Source Diode = TA 25℃ Forward Current Parameter Condition -- -- -4.1 A VSD Drain-Source Diode Forward Voltage -- -0.8 -1.2 V IS=-1A, VGS=0V Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.Copper, double sided, in a still air environment with Ta=25℃. 3.Pulse test ; Pulse width≤300us, duty cycle≤2% 2/5 V 1.1 MDD3407A -30V P-Channel Enhancement Mode MOSFET Typical Characteristics VGS =- 10V 25 1.15 VGS = -6.0V Normalized V(BR)DSS) -ID, Drain-Source Current (A) 30 VGS = -4.5V 20 VGS =-4.0V 15 VGS =-3.5V 10 5 0 VGS = -3.0V 0 1 2 3 4 1.10 1.05 1.00 0.95 0.90 5 ID = -1mA -80 -VDS, Drain -Source Voltage (V) Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) 10 TJ = -55°C TJ = 125°C 5 TJ = 25°C - 0.5 120 1 1.5 2 2.5 3 3.5 4 4.5 5 60 VGS = -4.5V 50 40 30 VGS = -10V 20 10 0 0 2 4 6 8 100 VGS = 0V -ID - Drain Current (A) Limited by RDS(ON) 10 TJ = 125°C 1 TJ = -55°C TJ = 25°C 0.1 0.6 0.9 1.2 1.5 10us 10 100us 1ms 1 10ms 100ms 0.1 0.01 0.3 10 Fig4. On-Resistance vs. Drain Current and Gate 100 0 200 -ID , Drain Current (A) Fig3. Typical Transfer Characteristics 0.01 160 70 -VGS, Gate -Source Voltage (V) -ISD, Reverse Drain Current (A) 80 80 VDS = -5V 0 40 Fig2. Normalized Threshold Voltage Vs. Temperature 15 0 0 Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics 20 -40 TA = 25°C Single Puse 0.1 1 DC 10 100 -VDS, Drain -Source Voltage (V) -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Fig6. Maximum Safe Operating Area 3/5 V 1.1 MDD3407A -30V P-Channel Enhancement Mode MOSFET Typical Characteristics -VGS, Gate-Source Voltage (V) C, Capacitance (pF) 10000 Ciss 1000 Coss 100 Crss 10 f = 1MHZ VGS = 0V 1 0 5 10 15 20 25 10 8 6 4 2 0 30 VDD = -15V ID = -2A 0 -VDS, Drain-Source Voltage (V) 4 6 8 10 12 Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance Fig7. Typical Capacitance Vs. Drain-Source Voltage ZqJA Normalized Transient 2 Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms 4/5 V 1.1 MDD3407A -30V P-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23-3L Package Outline Dimensions Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). 5/5 V 1.1