MDD4438

MDD4438 60V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MOSFET is based on MDD's unique device design to achieve low RDS(ON), fast switching performance. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage. 2. Features • LOW RDS(ON) • Extremely low switching loss • Excellent reliability and uniformity • Fast switching and soft recovery 3. Application • Battery protection • Power management • Switched mode power supply 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 8.2 A Pulsed Drain Current (Note 2) IDM 40 A Thermal Resistance, t＜10s RθJA 40 °C/W Thermal Resistance, steady-state RθJA 75 °C/W PD 3.1 W TJ -55~+150 °C Tstg -55~+150 °C Continuous Drain Current (Note 1) Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. Rev: 2024A0 MDD4438 60V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 4 G Gate D Drain S Source 5-8 1,2,3 Simplified outline Equivalent Circuit Package Q4438 6. TA=25°C unless otherwise specified Symbol Marking Parameter Condition SOP-8 Min Typ Max Unit VGS=0V, ID=250μA 60 — — V Forward VGS=20V — — 100 nA Reverse V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current VGS=-20V — — -100 nA IDSS Drain-Source Leakage Current VDS=60V, VGS=0V — Gate Threshold Voltage VDS=VGS, ID=250μA 1.5 1 μA 1.0 — 2.5 Drain-Source On-State Resistance VGS=10V, ID=8.2A — 16 20 — 18 28 Min Typ Max Unit — 2000 — pF — 140 — pF — 116 — pF — 50 — nC — 7 — nC — 14 — nC Min Typ Max Unit — 10 — ns — 21 — ns — 35 — ns — 18 — ns Min Typ Max Unit VGS(TH) RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=7.6A 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS=30V f=1MHz VGS=10V VDS=30V ID=10A 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS=10V VDD=30V ID=2A RG=3Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition V mΩ mΩ Drain-Source Diode Forward Voltage IS=8.2A, VGS=0V — 0.8 — V trr Body Diode Reverse Recovery Time — — ns Body Diode Reverse Recovery Charge — — 22 Qrr IF=20A di/dt=500A/μs VSD Craftsman-Made Consciention Chip Rev: 2024A0 2/5 12 nC www.microdiode.com MDD4438 60V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2024A0 3/5 www.microdiode.com MDD4438 60V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 20 20 Ta=25℃ Pulsed VGS=4V,4.5V,5V,5.5V VDS=5V Ta=25℃ Pulsed 15 3.5V 10 DRAIN CURRENT DRAIN CURRENT ID ID (A) (A) 15 5 10 5 VGS=3V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 0 2 4 GATE TO SOURCE VOLTAGE (V) Figure 1. Typ. output characteristics 6 VGS (V) Figure 2. Typ. transfer characteristics 80 80 Ta=25℃ Pulsed RDS(ON) 40 VGS=4.5V 20 VGS=10V 0 0 2 4 6 DRAIN CURRENT 40 ON-RESISTANCE ON-RESISTANCE 60 (m) 60 RDS(ON) (m) Ta=25℃ Pulsed ID 8 ID=8.2A 20 0 10 0 2 (A) 4 6 GATE TO SOURCE VOLTAGE Figure 3. On-Resistance vs. Drain Current 8 VGS 10 (V) Figure 4. On-Resistance vs. Gate Voltage 1 Ta=25℃ Pulsed IS (A) 1.7 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) 1.8 ID=250uA 1.6 1.5 25 50 75 JUNCTION TEMPERATURE PERAT 100 J (℃ ) Craftsman-Made Consciention Chip Rev: 2024A0 0.01 1E-3 0.2 125 Figure 5. Typ. Threshole Voltage characteristics 0.1 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 1.0 VSD (V) Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDD4438 60V N-Channel Enhancement Mode MOSFET 12. Outline Drawing SOP-8 Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2024A0 5/5 www.microdiode.com