MDD30N06D

MDD30N06D 60V N-Channel Enhancement Mode POWER MOSFET 1. Description This N-Channel MOSFET is produced using MDD's advanced Power Trench technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 31mΩ at VGS = 10 V, ID = 15 A • Extremely Low Reverse Recovery Charge, Qg • 100% UIS Tested • RoHS Compliant 3. Application • Power Management in Telecom.,Industrial Automation • Motor Drives and Uninterruptible Power Supplies • Current Switching in DC/DC&AC/DC(SR) Sub-systems 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 30 A Single Pulsed Avalanche Energy (Note 3) EAS 27.6 mJ Thermal Resistance, steady-state RθJA 37 °C/W PD W TJ 37 -55~+150 °C Tstg -55~+150 °C Continuous Drain Current (Note 1) Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=30V, V GS=10V, L= 0.5mH, Rg= 25Ω, IAS=10.5A. Rev: 2025A0 MDD30N06D 60V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 3 D S Simplified outline Equivalent Circuit D Drain G Source Symbol Parameter Package MDD 30N06D TO-252 XXY: Date code S 6. TA=25°C unless otherwise specified Marking Condition Min Typ Max Unit VGS=0V, ID=250μA 60 — — V Forward VGS=20V — — 100 nA Reverse VGS=-20V — — -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS =60V, VGS=0V — — 1 μA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1.1 1.5 2.5 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=30A — 25 31 mΩ VGS=4.5V, ID=20A — 28 37 mΩ Min Typ Max Unit — 1422 — pF 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS =30V f=1MHz VGS=0 to 10V VDS=30V ID=20A 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS =10V VDD =30V ID=20A RG=3Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition — — 60 52 — — pF pF — 28 — nC — 6 — nC — 5 — nC Min Typ Max Unit — — 6 ns 14 — — — 26 ns — 4 — — ns Min Typ Max Unit ns Drain-Source Diode Forward Voltage IS=20A, VGS=0V — 0.8 1.2 V trr Body Diode Reverse Recovery Time — 23 — ns Qrr Body Diode Reverse Recovery Charge IF=20A di/dt=100A/μs — 28 — nC VSD Craftsman-Made Consciention Chip Rev: 2025A0 2/5 www.microdiode.com MDD30N06D 60V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A0 3/5 www.microdiode.com MDD30N06D 60V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 60 20 VGS = 10V VDS = 5V 16 VGS = 4.5V TJ = 125°C 12 ID(A) ID(A) VGS = 3.5V 30 TJ = -55°C 8 VGS = 3.0V 4 TJ = 25°C VGS = 2.5V 0 0 0 1 2 3 4 5 1 1.5 2 2.5 VDS(V) 4 25 30 Figure 2. Typ. transfer characteristics 10 60 50 VDD = 30V ID = 20A 8 40 VGS = 4.5V 6 VGS(V) RDS(ON)(mΩ) 3.5 VGS(V) Figure 1. Typ. output characteristics 30 4 20 VGS = 10V 2 10 0 0 5 10 15 0 20 0 5 10 15 ID(A) 20 Qg(nC) Figure 3. On-Resistance vs. Drain Current Figure 4. Gate Charge Characteristics 100 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 Pulse Width≤300μs Duty Cycle≤0.5% VGS = 0V VGS = 10V 10 VGS = 4.5V IS(A) Normalized RDS(ON) 3 TJ = 125°C 1 TJ = -55°C TJ = 25°C 0.1 -80 -40 0 40 80 120 160 200 0.01 0 TJ(℃) Junction Temperature 0.2 0.4 0.6 0.8 1 1.2 VSD(V) Figure 5. Normalized on Resistance vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2025A0 Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDD30N06D 60V N-Channel Enhancement Mode MOSFET 12. Outline Drawing TO-252 Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 5/5 www.microdiode.com