MDD7N60F
600V N-Channel Enhancement Mode MOSFET
TO-220F-3L
VDS
600 V
ID(Tc=25℃)
7A
RDS(on),typ
1.0Ω@VGS=10V
Qg,typ
20.7nC
1
General Features
Ultra low gate charge
Low reverse transfer Capacitance
Fast switching capability
Avalanche energy tested
Improved dv/dt capability, high ruggedness
2
3
Equivalen t Circuit
Application
High efeciency switch mode power supplies
Electronic lamp ballasts based on half bridge
LED power supplies
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
ID
7
A
Pulsed Drain Current(Note 1)
IDM
28
A
Continuous diode forward current
IS
7
A
Diode pulse current
IS,pulse
28
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5
V/ns
45
W
120
W
Power Dissipation TO-220F
PD
Power Dissipation TO-220/TO-252
Junction Temperature
TJ
150
℃
Storage Temperature
Tstg
-55 ~150
℃
Thermal Characteristics
Parameter
Symbol
Thermal resistance, Junction-to-case
RθJC
2.78
°C/W
Thermal resistance, Junction-to-ambient
RθJA
62.5
°C/W
Notes:
Value
Unit
1. Pulse width limited by maximum junction temperature.
2. L=10mH, IAS = 8.4A, Starting Tj= 25°C.
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V 1.0
MDD7N60F
600V N-Channel Enhancement Mode MOSFET
Ta = 25℃ unless otherwise specified
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VGS=0V, ID=250μA
600
--
--
V
Forward
VGS=30V, VDS=0V
--
--
100
nA
Reverse
VGS=-30V, VDS=0V
--
--
-100
nA
V(BR)DSS
Drain-Source Breakdown Voltage
IGSS
Gate-Source Leakage Current
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
--
--
1
uA
VGS(TH)
Gate Threshold Voltage
VDS=VGS, ID=250μA
2.0
--
4.0
V
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=1A
--
1.0
1.4
Ω
Min
Typ
Max
Unit
--
760
pF
--
101
pF
--
6.1
pF
--
20.7
--
nC
--
5.7
--
nC
--
7.2
--
nC
Min
Typ
Max
Unit
--
--
15.2
ns
--
--
33.4
ns
--
--
53.6
ns
--
--
31
ns
Min
Typ
Max
Unit
Dynamic Electrical Characteristics
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Condition
VDS=25V
VGS=0V
f=1MHz
VDS=480V, VGS=10V,
ID=7A
(Note1,2)
Switching Characteristics
Symbol
Parameter
td(on)
Turn on Delay Time
tr
Turn on Rise Time
td(off)
Turn Off Delay Time
tf
Turn Off Fall Time
Condition
VDS=300V,
ID=7A,
RG=10Ω (Note1,2)
Source Drain Diode Characteristics
Symbol
Parameter
Condition
ISD
Source drain current(Body Diode)
--
--
7
A
ISM
Pulsed Current
--
--
28
A
VSD
Drain-Source Diode Forward Voltage
IS=7A, VGS=0V
--
0.85
1.5
V
trr
Body Diode Reverse Recovery Time
--
480
--
ns
Qrr
Body Diode Reverse Recovery Charge
VR=300V
IF=7A,
-diF/dt =100A/µs
--
2.1
--
uC
Notes:
1.Pulse test ; Pulse width≤300us, duty cycle≤2%.
2.Essentially independent of operating temperature.
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V 1.0
MDD7N60F
600V N-Channel Enhancement Mode MOSFET
Electrical Characteristics Diagrams
Figure 1. Typical Output Characteristics
Figure 2. Transfer Characteristics
VGS=10V
Tc = 25°C
VGS=7V
VGS=6V
VGS=5.5V
Tc = 150°C
VDS ,Drain−source voltage (V)
VGS ,Gate−source voltage (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
VGS = 10 V
Tc = 25°C
Pulse test
IDS=0.25 mA
Pulse test
ID ,Drain current (A)
Tj ,Junction temperature (°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
VGS=0 V
IDS=0.25 mA
Pulse test
VGS=10 V
IDS=3.5 A
Pulse test
Tj ,Junction temperature (°C)
Tj ,Junction temperature (°C)
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V 1.0
MDD7N60F
600V N-Channel Enhancement Mode MOSFET
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characterist
Ciss
Notes:f = 1 MHz,VGS=0 V
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
VDS=480V,
ID = 7 A
Crss
QG ,Total Gate Charge (nC)
VDS ,Drain-Source Voltage (V)
Figure 10. Power Dissipation vs. Temperature
Figure9.MaximumSafeOperatingArea
100us
1ms
10ms
Limited by RDS(on)
DC
Notes:
T = 25°C
c
T = 150°C
j
Single Pulse
Tc ,Case temperature (°C)
VDS ,Drain-Source Voltage (V)
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V 1.0
MDD7N60F
600V N-Channel Enhancement Mode MOSFET
Figure 11. Continuous Drain Current vs. Temperature
Figure 12. Body Diode Transfer Characteristics
Tc = 150°
C
Tc = 25°C
VSD ,Source-Drain Voltage (V)
Tc ,Case temperature (°C)
Figure 13 Transient Thermal Impendance,Junction to Case
P
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
DM
t
Duty = t/T
Z (t)=3.2°C/W Max. T
θJC
t ,Pulse Width (s)
5/7
V
V 1.0
1.0
MDD7N60F
600V N-Channel Enhancement Mode MOSFET
RL
VDS
RG
VGS
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2µF
50kΩ
0.3µF
Switching Waveforms
Same
Type as
D.U.T.
VDS
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
The curve above is for reference only.
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V 1.0
MDD7N60F
600V N-Channel Enhancement Mode MOSFET
Mechanical Dimensions for TO-220F
SYMBOL
E
A
A1
A4
c
D
H1
e
L
L1
ФP
ФP3
F3
G3
b1
b2
MIN
9.96
4.50
2.34
2.56
0.40
15.57
12.68
2.88
3.03
3.15
3.15
1.25
1.18
0.70
mm
NOM
10.16
4.70
2.54
2.76
0.50
15.87
6.70REF
2.54BSC
12.98
3.03
3.18
3.45
3.30
1.35
1.28
0.80
MAX
10.36
4.90
2.74
2.96
0.65
16.17
13.28
3.18
3.38
3.65
3.45
1.55
1.43
0.95
Important Notice and Disclaimer
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at any time without notice. Customers should obtain and confirm the latest product information and specifications before final
design,purchase or use.
Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or
customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are
purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen).
Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or
systems without express written approval of Microdiode Electronics (Shenzhen).
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