MDDG10R08P

MDDG10R08P 100V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MV MOSFET is produced using MDD Semiconductor's advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 8 mΩ at VGS = 10 V, ID = 35 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIS Tested • RoHS Compliant 3. Application • Synchronous Rectification for AC / DC Quick Charger • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter • Battery management System 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) ID 75 A Pulsed Drain Current (Note 2) IDM 240 A Single Pulsed Avalanche Energy (Note 3) EAS 130 mJ Thermal Resistance, steady-state RθJA 50 °C/W Power Dissipation Junction Temperature Storage Temperature Note: PD TJ Tstg 100 -55~+150 -55~+150 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=50V, VGS=10V, L= 0.5mH, Rg= 25Ω, IAS=23A. Rev: 2025A1 W °C °C MDDG10R08P 100V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 3 D S Simplified outline Equivalent Circuit Drain Source 6. TA=25°C unless otherwise specified Symbol Parameter Marking Package MDD G10R08P TO-220C-3L Condition VGS=0V, ID=250μA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current Gate Threshold Voltage VDS=VGS, ID=250μA VGS(TH) RDS(ON) Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) tr td(off) tf — — V 100 nA Reverse VGS=-20V — — -100 nA VDS =100V, VGS=0V — 1 μA 1.5 — 2.0 2.5 V VGS=10V, ID=35A — 6.5 8 mΩ VGS=4.5V, ID=30A — 8.3 11 mΩ Min Typ Max Unit — 2000 — pF — 410 — pF — 90 — pF — 41 — nC — 10.3 — nC — 7.5 — nC Min Typ Max Unit — 11 — ns — 36 — ns — 33 — ns — 10 — ns Min Typ Max Unit Condition VGS=0V VDS =50V f=1MHz VGS=10V VDS=50V ID=30A Parameter Condition Turn on Delay Time VGS=10V VDD =50V ID=30A RG=2.7Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol 100 — 8. Switching Characteristics Symbol Unit — Parameter Input Capacitance Max VGS=20V 7. Dynamic Electrical Characteristics Ciss Typ Forward Drain-Source On-State Resistance Symbol Min Parameter Condition Drain-Source Diode Forward Voltage IS=30A, VGS=0V — 0.85 — V trr Body Diode Reverse Recovery Time — — ns Body Diode Reverse Recovery Charge — — 50 Qrr IF=30A di/dt=100A/μs VSD Craftsman-Made Consciention Chip Rev: 2025A1 2/5 71 nC www.microdiode.com MDDG10R08P 10.Test Circuits And Waveforms 100V N-Channel Enhancement Mode MOSFET Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A1 3/5 www.microdiode.com MDDG10R08P 100V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 240 200 10V 7V 5V 160 4.5V 25°C 140 ID (A) 160 ID (A) VDS=5V 180 200 4V 120 150°C 120 100 80 80 3.5V 40 3V 60 40 20 0 0 0 1 2 3 4 0 5 1 2 3 VDS (V) Figure 1. Typ. output characteristics 5 6 7 Figure 2. Typ. transfer characteristics 30 12.0 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 ID=30A 27 24 VGS=4.5V 21 RDS(on) (mΩ) RDS(on) (mΩ) 4 VGS (V) 18 15 150°C 12 9 VGS=10V 6 3 25°C 0 10 20 30 40 50 60 70 80 90 100 4 5 6 7 ID (A) 8 9 10 VGS (V) Figure 4. On-Resistance vs. Gate Voltage Figure 3. On-Resistance vs. Drain Current 1.8 1.2 ID=250μA 1.6 RDS(on)_Normalized Vgs(th)_Normalized 1.1 1.0 0.9 0.8 VGS=10V,ID=30A 1.4 1.2 1.0 VGS=4.5V,ID=30A, 0.8 0.7 0.6 0.6 -50 -25 0 25 50 75 100 125 -50 150 Craftsman-Made Consciention Chip Rev: 2025A1 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Figure 5. Normalized Threshold Voltage vs. Junction Temperature -25 Figure 6. On-Resistance vs. Junction Temperature 4/5 www.microdiode.com MDDG10R08P 100V N-Channel Enhancement Mode MOSFET 12. Outline Drawing TO-220C-3L Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A1 5/5 www.microdiode.com