MDDG10R04B

MDDG10R04B 100V N-Channel Enhancement Mode MOSFET TO-263-3 VDS 100V ID(Tc=25℃) 135A RDS(on) 3.6mΩ@VGS=10V D G Features • • • • S Low RDS(ON) & FOM Extremely low switching loss Excellent reliability and uniformity Fast switching and soft recovery Application • • • • • Marking Battery management Power management for inverter systems Switching voltage regulator DC-DC convertor Switched mode power supply Equivalen t Circuit G10R04B XXX XXX: Date Code Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 135 A 105 A Continuous Drain Current(Tc=25℃) ID Continuous Drain Current(Tc=100℃) Pulsed Drain Current (Note 1) ID,pulse 548 A Thermal Resistance, Junction-Case RθJC 0.75 °C/W Thermal Resistance, Junction-Ambient(Note 2) RθJA 62 °C/W Avalanche Current EAS 340 mJ Power Dissipation(Note 3) PD 214 W Junction Temperature TJ -55 ~+150 ℃ Storage Temperature Tstg -55 ~+150 ℃ Note 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) 1/7 V 1.0 MDDG10R04B 100V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Condition VGS=0V, ID=250μA Min Typ Max Unit 100 -- -- V Forward VGS=20V -- -- 100 nA Reverse VGS=-20V -- -- -100 nA Drain-Source Leakage Current VDS=100V, VGS=0V -- -- 1 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2 -- 4 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=30A -- 3.6 4.2 mΩ Min Typ Max Unit -- 6320 -- pF -- 1210 -- pF -- 41 -- pF -- 88 -- nC -- 30 -- nC -- 16 -- nC Min Typ Max Unit -- 27 -- ns Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Condition VGS=0V VDS=50V f=100kHz VGS=10V, VDS=50V, ID=100A Gate Drain Charge Switching Characteristics Symbol Parameter Condition td(on) Turn on Delay Time tr Turn on Rise Time VDS =50V, -- 59 -- ns td(off) Turn Off Delay Time ID=50A, -- 48 -- ns tf Turn Off Fall Time -- 14 -- ns Min Typ Max Unit -- -- 1.3 V VGS=10V, RG=1.6Ω Source Drain Diode Characteristics Symbol Parameter Condition VSD Drain-Source Diode Forward Voltage trr Body Diode Reverse Recovery Time IS=20A, -- 68 -- ns Qrr Body Diode Reverse Recovery Charge dIs/dt=100A/µs -- 135 -- nC IS=20A, VGS=0V 2/7 V 1.0 MDDG10R04B 100V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams Diagram1:Powerdissipation Diagram2:Draincurrent 250 140 120 200 100 150 ID[A] Ptot[W] 80 60 100 40 50 20 0 0 50 100 150 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 10 µs 102 100 µs 0.2 10-1 0.1 0.05 ZthJC[K/W] ID[A] 1 ms 101 10 ms 0.02 0.01 DC 10-2 100 single pulse 10-1 10-1 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-3 10-2 10-1 100 tp[s] ZthJC=f(tp);parameter:D=tp/T ID=f(VDS);TC=25°C;D=0;parameter:tp 3/7 V 1.0 MDDG10R04B 100V N-Channel Enhancement Mode MOSFET Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 9 10 V 7.5 V 6V 320 4.5 V 5V 240 RDS(on)[mΩ] 6 ID[A] 5.5 V 160 5V 80 0 6V 7.5 V 10 V 3 4.5 V 0 1 2 3 4 0 5 0 50 VDS[V] 100 150 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 200 160 150 gfs[S] ID[A] 120 100 80 25 °C 50 40 175 °C 0 0 2 4 6 8 0 0 VGS[V] 50 100 150 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C 4/7 V 1.0 MDDG10R04B 100V N-Channel Enhancement Mode MOSFET Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 10 4.0 3.5 8 3.0 1500 µA 2.5 RDS(on)[mΩ] 6 150 µA VGS(th)[V] 98 % typ 4 2.0 1.5 1.0 2 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=100A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 10 180 Tj[°C] 103 Ciss 25 °C 25 °C, max 175 °C 175 °C, max Coss 102 IF[A] C[pF] 103 102 101 101 Crss 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 VSD[V] VDS[V] C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj 5/7 V 1.0 MDDG10R04B 100V N-Channel Enhancement Mode MOSFET Diagram14:Typ.gatecharge Diagram13:Avalanchecharacteristics 3 10 10 8 50 V 102 6 VGS[V] IAS[A] 25 °C 100 °C 20 V 80 V 40 60 4 150 °C 1 10 2 100 100 101 102 103 0 0 20 80 100 Qgate[nC] tAV[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA 6/7 V 1.0 MDDG10R04B 100V N-Channel Enhancement Mode MOSFET PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches 7/7 V 1.0